參數(shù)資料
型號(hào): AM29DL320GT70WDF
廠商: SPANSION LLC
元件分類: DRAM
英文描述: For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
中文描述: 2M X 16 FLASH 3V PROM, 70 ns, PBGA63
封裝: 8 X 14 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63
文件頁數(shù): 26/58頁
文件大?。?/td> 1239K
代理商: AM29DL320GT70WDF
24
Am29DL320G
September 27, 2004
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations.
Table 13
defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
may
place the device in an unknown state. A reset com-
mand is required to return the device to reading array
data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-sus-
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
again read array data with the same exception. See
the Erase Suspend/Erase Resume Commands sec-
tion for more information.
The system
must
issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
tion, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and
Figure 14
shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to the read mode. Once erasure be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-sus-
pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Sus-
pend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 13
shows the address and data requirements.
This method is an alternative to that shown in
Table 6
,
which is intended for PROM programmers and re-
quires V
ID
on address pin A9. The autoselect com-
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
9Ch
0095h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
9Eh
000Xh
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
相關(guān)PDF資料
PDF描述
AM29DL320GB70WDF For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GT70WDFN For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GB70WDFN For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path.
AM29DL320GT70WMIN DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL
AM29DL320GB70WMIN DIODE SCHOTTKY SINGLE 10V 200mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-323 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29DL322DB7REIT 制造商:AMD 功能描述:New
AM29DL322DB-90WDIT 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 63FBGA - Tape and Reel
AM29DL322DT-90EI-T 制造商:Advanced Micro Devices 功能描述:
AM29DL322GB-90EI 制造商:Advanced Micro Devices 功能描述:2M X 16 FLASH 3V PROM, 90 ns, 48 Pin Plastic SMT
AM29DL322GT-90EI 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP