參數(shù)資料
型號(hào)： AM28F010A-120FI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述： 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
封裝： REVERSE, TSOP-32
文件頁(yè)數(shù)： 16/35頁(yè)
文件大?。?/td> 464K
代理商： AM28F010A-120FI
16
Am28F010A
Toggle Bit—DQ6
The device also features a “Toggle Bit” as a method to
indicate to the host system that the Embedded algo-
rithms are either in progress or completed.
Successive attempts to read data from the device at a
valid address, while the Embedded Program algorithm
is in progress, or at any address while the Embedded
Erase algorithm is in progress, will result in DQ6 tog-
gling between one and zero. Once the Embedded Pro-
gram or Erase algorithm is completed, DQ6 will stop
toggling to indicate the completion of either Embedded
operation. Only on the next read cycle will valid data be
obtained. The toggle bit is valid after the rising edge of
the first WE# pulse of the two write pulse sequence, un-
like Data# Polling which is valid after the rising edge of
the second WE# pulse. This feature allows the user to
determine if the device is partially through the two write
pulse sequence.
See Figures 5 and 6 for the Toggle Bit timing specifica-
tions and diagrams.
START
Fail
No
DQ6 = Toggle
DQ5 = 1
Pass
Yes
No
Read Byte
(DQ0–DQ7)
Addr = VA
Read Byte
(DQ0–DQ7)
Addr = VA
Yes
No
Yes
DQ6 = Toggle
VA = Byte address for programming
= XXXXh during chip erase
16778D-10
Note:
DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1”.
Figure 5.
Toggle Bit Algorithm
相關(guān)PDF資料
PDF描述
AM28F010A-120JC 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JCB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JE 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JI 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JIB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F010A-120FIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JC 制造商:Advanced Micro Devices 功能描述:
AM28F010A-120JCB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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