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參數(shù)資料
| 型號(hào)： | ALT6720RM45Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 832 MHz - 862 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 457K |
| 代理商： | ALT6720RM45Q7 |
6
Data Sheet- Rev 2.0
06/2011
ALT6720
Figure 4: LTE Gain (dB) over Temperature
(VBATT=VCC=3.4V)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Gain
(dB)
Pout (dBm)
Figure 4: LTE Gain (dB) over Temperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
Figure 5: LTE Gain (dB) over Voltage
(TC=258C)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
Efficiency
(%)
Pout (dBm)
Figure 6: LTE PAE (%) over Temperature
(Vbatt=VCC=3.4V)
-303.4cc
25C3.4Vcc
90C3.4Vcc
Figure 6: LTE PAE (%) over Temperature
(VBATT=VCC=3.4V)
Figure 7: LTE PAE (%) over Voltage
(TC=258C)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Gain
(dB)
Pout (dBm)
Figure 5: LTE Gain (dB) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Efficiency
Pout (dBm)
Figure 7: LTE PAE (%) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
Figure 8: LTE ACLR1 (dBc) over Temperature
(VBATT=VCC=3.4V)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1
(5MHz
dBc)
Pout (dBm)
Figure 8: LTE ACRL1 (dBc) over Temperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
Figure 9: LTE ACLR1 (dBc) over Voltage
(TC=258C)
Performance Data Plots:
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
ACLR1
(5MHz
dBc)
Pout (dBm)
Figure 9: LTE ACLR1 (dBc) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
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