參數(shù)資料
型號： ALD1110EPA
廠商： Advanced Linear Devices, Inc.
英文描述： QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩)
中文描述： 四/雙電可編程模擬器件（EPAD⑩）
文件頁數(shù)： 5/10頁
文件大?。?/td> 77K
代理商： ALD1110EPA
ALD1108E/ALD1110E
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON VOLTAGE (V)
0
2
4
6
10
12
8
20
15
10
5
0
D
T
A
= +25
°
C
V
GS
= +12V
V
GS
= + 2V
V
GS
= + 4V
V
GS
= + 6V
V
GS
= + 8V
V
GS
= +10V
OUTPUT CHARACTERISTICS
-200 -160 -120 -80 -40
+200
+1.0
0
0 40 80 120 160
DRAIN SOURCE VOLTAGE (mV)
D
-1.0
V
GS
= +12V
V
GS
= +6V
V
GS
= +8V
V
GS
= +10V
T
A
= +25
°
C
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
2.0
1.5
1.0
5.0
T
(
T
A
= +25
°
C
0
V
GS
= V
t
+ 4.0V
V
DS
= 10V
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
75
70
60
50
H
C
μ
A
T
A
= +25
°
C
V
GS
= V
t
+ 4.0V
V
DS
= 5.0V
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
T
A
= +25
°
C
V
DS
= +5.0V
D
(
3.0
2.0
1.0
0
V
GS
= +5V
V
GS
= +1V
V
GS
= +2V
V
GS
= +3V
V
GS
= +4V
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
6
5
4
3
2
1
0
AMBIENT TEMPERATURE (
°
C)
-50 -25 0 25 50 75 100 125
D
(
V
G
= 5V
V
t
= 1.0V
V
t
= 1.5V
V
t
= 3.0V
V
t
= 2.0V
V
t
= 2.5V
相關(guān)PDF資料
PDF描述
ALD2321B ULTRA LOW VOS EPAD DUAL CMOS ANALOG VOLTAGE COMPARATOR
ALD2321BPC ULTRA LOW VOS EPAD DUAL CMOS ANALOG VOLTAGE COMPARATOR
ALD2321BSC ULTRA LOW VOS EPAD DUAL CMOS ANALOG VOLTAGE COMPARATOR
ALD1107 Circular Connector; No. of Contacts:100; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
ALD1107DB Circular Connector; No. of Contacts:100; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ALD1110EPAL 功能描述:MOSFET Dual EPAD(R) Prog RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ALD1110ESA 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩)
ALD1110ESAL 功能描述:MOSFET Dual EPAD(R) Prog RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ALD1115 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
ALD1115_11 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*