參數(shù)資料
型號(hào)： ALD1107SB
廠商： Advanced Linear Devices, Inc.
英文描述： JT 100C 100#22 PIN GRND PLUG
中文描述： 四/雙P溝道MOSFET的陣列匹配
文件頁數(shù)： 2/6頁
文件大?。?/td> 61K
代理商： ALD1107SB
ALD1107/ALD1117
Advanced Linear Devices
2
Gate Threshold
Voltage
V
T
-0.4
-0.7
-1.0
-0.4
-0.7
-1.0
V
I
DS
= -1.0
μ
A V
GS
= V
DS
Offset Voltage
V
GS1
-V
GS2
V
OS
2
10
2
10
mV
I
DS
= -10
μ
A V
GS
= V
DS
Gate Threshold
Temperature
Drift
2
TC
VT
-1.3
-1.3
mV/
°
C
On Drain
Current
I
DS (ON)
-1.3
-2
-1.3
-2
mA
V
GS
= V
DS
= -5V
Transconductance
G
IS
0.25
0.67
0.25
0.67
mmho V
DS
= -5V I
DS
= -10mA
Mismatch
G
fs
0.5
0.5
%
Output
Conductance
G
OS
40
40
μ
mho
V
DS
= -5V I
DS
= -10mA
Drain Source R
DS (ON)
On Resistance
1200
1800
1200
1800
V
DS
= -0.1V V
GS
= -5V
Drain Source
On Resistance
Mismatch
R
DS (ON)
0.5
0.5
%
V
DS
= -0.1V V
GS
= -5V
Drain Source
Breakdown
Voltage
BV
DSS
-12
-12
V
I
DS
= -1.0
μ
A V
GS
= 0V
Off Drain
Current
1
I
DS (OFF)
10
400
10
400
pA
nA
V
DS
= -12V V
GS
= 0V
T
A
= 125
°
C
4
4
Gate Leakage
Current
I
GSS
0.1
10
1
0.1
10
1
pA
nA
V
DS
= 0V V
GS
= -12V
T
A
= 125
°
C
Input
Capacitance
2
C
ISS
1
3
1
3
pF
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
ALD1107
Typ
ALD1117
Typ
Test
Parameter
Symbol
Min
Max
Min
Max
Unit
Conditions
Notes:
1
Consists of junction leakage currents
2
Sample tested parameters
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
-13.2V
-13.2V
500 mW
0
°
C to +70
°
C
-55
°
C to +125
°
C
-65
°
C to +150
°
C
+260
°
C
PA, SA, PB, SB package
DA, DB package
Storage temperature range
Lead temperature, 10 seconds
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