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參數(shù)資料
| 型號(hào)： | AJT030 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 17K |
| 代理商： | AJT030 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 10 mA
BV
CER
I
C
= 20 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
CE
= 35 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
55
3.5
15
UNITS
V
V
V
mA
---
R
BE
= 10
5.0
150
P
G
η
C
V
CC
= 50 V P
OUT
= 30 W f = 960 - 1215 MHz
7.8
40
dB
%
NPN SILICON RF POWER TRANSISTOR
AJT030
DESCRIPTION:
The
ASI AJT030
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
3.5 A
40 V
75 W @ T
C
≤
85
O
C
-65
O
C to +250
O
C
-65
O
C to +200
O
C
2.2
O
C/W
PACKAGE STYLE .400 2L FLG
ORDER CODE: ASI10546
MINIMUM
inches / mm
.395 / 10.03
.140 / 3.56
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.230 / 5.84
.407 / 10.34
H
.118 / 3.00
.131 / 3.33
DIM
K
L
I
J
.386 / 9.80
O
P
Q
R
N
M
.450 / 11.43
.050 / 1.27
.110 / 2.80
.193 / 4.90
.003 / 0.08
.006 / 0.15
.900 / 22.86
.650 / 16.51
.063 / 1.60
.125 / 3.18
.170 / 4.32
.062 / 1.58
.405 / 10.29
.110 / 2.80
J
P
G
M
C
B
D
H
F
N
Q
I
O
K
E
.120
A
.062 x 45°
R
L
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