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參數(shù)資料
| 型號： | AH315-G |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 5 X 5 MM, GREEN, LEADLESS, PLASTIC, MO-220VHHC, SMT, QFN-24 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 339K |
| 代理商： | AH315-G |
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Data Sheet: Rev A 09/02/10
- 2 of 9 -
Disclaimer: Subject to change without notice
2010 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
Specifications
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-55 to +125 o C
RF Input Power, CW, 50,T = 25C +19 dBm
Device Voltage, Vcc, Vbias
+8 V
Collector Current, Icc (Icc1 + Icc2)
1600 mA
Iref 1
100 mA
Iref 2
50 mA
Device Power
8 W
Thermal Resistance RTH
14.4 o C/W
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Vcc
+4.75
+5
+6
V
Icc @ 24 dBm
700
mA
TJ (for >10
6 hours MTTF)
+200
oC
Operating Temp. Range
-40
+85
oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25C, +5V Vsupply, 3.4 – 3.6 GHz, in tuned application circuit.
Parameter
Conditions
Min
Typical
Max
Units
Operational Frequency Range
3.3
3.8
GHz
Test Frequency
3.5
GHz
Power Gain
25
dB
Input Return Loss
-15.2
dB
Output Return Loss
-11.3
dB
EVM
See Note 1.
2.3
2.5
%
Efficiency
8
%
Output P1dB
+33
dBm
Noise Figure
7.3
dB
Device Voltage, Vcc
+5
V
Iref 1
27
mA
Iref 2
10
mA
Quiescent Current, Icq
See Note 2.
600
mA
Notes:
1.
Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
2.
This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=70
Ω off pin 1 and
R2=150
Ω off pin 16.
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|---|---|
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