參數(shù)資料
型號： AH215
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： SMT, SOIC-8
文件頁數(shù)： 1/4頁
文件大小： 127K
代理商： AH215
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
April 2003
The Communications Edge
TM
AH215
1 Watt, High Gain HBT Amplifier
Preliminary Product Information
Product Features
400 – 2300 MHz
+31 dBm P1dB
+46 dBm Output IP3
17 dB Gain @ 900 MHz
Single Positive Supply (+5 V)
SOIC-8 SMT Package
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve superior performance over a broad
frequency range with +46 dBm OIP3 and +31 dBm of
compressed 1-dB power. The part is housed in an
industry standard SOIC-8 SMT package. All devices are
100% RF and dc tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required.
The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Slug
N/C or GND
2, 4, 5
Target Specifications
Parameters
Units
Min
Typ
Max
Frequency Range
MHz
400
2140
2300
S21 - Gain
dB
10
11.5
S11 - Input R.L.
dB
-15
S22 - Output R.L.
dB
-10
Output P1dB
dBm
+31
Output IP3
2
dBm
+46
Noise Figure
dB
6.0
IS-95 Channel Power
@ -60 dBc ACPR, 9 Ch .Fwd., 1960 MHz
dBm
+21
W-CDMA Channel Power
@ -55 dBc, 2140MHz
dBm
+20
Operating Current Range
mA
400
450
500
Device Voltage
V
5
Test conditions unless otherwise noted.
1. T = 25C, Vsupply = +5 V, Frequency = 2140 MHz, in recommended application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Specifications
Parameters
Units
Typical
Frequency
MHz
880
1960
2140
S21 - Gain
dB
17
12
11.5
S11 - Input R.L.
dB
-10
-15
S22 - Output R.L.
dB
-10
Output P1dB
dBm
+31
31
Output IP3
2
dBm
+45
+46
46
Noise Figure
dB
6.0
Supply Bias
+5 V @ 450 mA
Typical parameters reflect performance in recommended application circuit:
Supply Voltage = +5 V, I = 450 mA, +25
° C
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
RF Input Power (continuous)
+26 dBm
AH215
1 Watt, High Linearity HBT Amplifier
dc Voltage
+8 V
(Available in Tape & Reel)
dc Power
5 W
AH215-PCB1960
Operation of this device above any of these parameters may cause permanent damage.
1
2
3
4
8
7
6
5
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相關代理商/技術參數(shù)
參數(shù)描述
AH215-RFID 制造商:WJCI 制造商全稱:WJCI 功能描述:1 Watt, High Gain HBT Amplifier
AH215-S8 制造商:WJCI 制造商全稱:WJCI 功能描述:1 Watt, High Gain HBT Amplifier
AH215-S8G 功能描述:射頻放大器 400-2300MHz 18dB Gain@900MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AH215-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH215-S8PCB1960 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
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