參數(shù)資料
型號： AG303-63G
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： GREEN, PLASTIC, MO-203, SOT-363, SMT, 6 PIN
文件頁數(shù)： 2/5頁
文件大小： 508K
代理商： AG303-63G
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 2 of 5
August 2009
AG303-63
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1
, Icc = 35 mA
Frequency
MHz
100
500
900
1900
2140
2400
3500
5800
S21
dB
21.4
21.1
20.5
18.3
17.7
17.1
15.1
11.4
S11
dB
-23
-20
-21
-20
-21
-20
S22
dB
-20
-25
-24
-19
-18
17
-16
-11
Output P1dB
dBm
+14.0
+12.6
+12.2
+12.1
+9.8
Output IP3
dBm
+26.3
+26.1
+25.8
+25.3
+24.9
+24.2
Noise Figure
DB
3.1
3.2
3.4
3.5
1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1
, Icc = 35 mA typical, 50
System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
12
14
16
18
20
22
0
1
2
3
4
Frequency (GHz)
Ga
in
(
d
B
)
-40 C
+25 C
+85 C
Return Loss
-40
-30
-20
-10
0
1
2
3
4
5
6
Frequency (GHz)
S
11,
S
22
(d
B
)
S11
S22
I-V Curve
0
10
20
30
40
50
60
3.0
3.5
4.0
4.5
Device Voltage (V)
D
e
v
ic
e
C
u
r
e
n
t
(m
A
)
Optimal operating point
Output IP3 vs. Frequency
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
O
IP3
(d
B
m
)
-40 C
+25 C
+85 C
Output IP2 vs. Frequency
20
25
30
35
40
0
200
400
600
800
1000
Frequency (MHz)
OI
P
2
(dBm
)
-40C
+25C
+85C
Noise Figure vs. Frequency
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
N
F
(d
B
)
-40 C
+25 C
+85 C
P1dB vs. Frequency
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
P1
dB
(dB
m
)
-40 C
+25 C
+85 C
Output Power / Gain vs. Input Power
frequency = 900 MHz
10
12
14
16
18
20
-20
-16
-12
-8
-4
0
4
Input Power (dBm)
Ga
in
(
d
B
)
0
4
8
12
16
20
O
ut
put
P
ow
e
r
(dBm
)
Output Power
Gain
Output Power / Gain vs. Input Power
frequency = 2000 MHz
8
10
12
14
16
18
-20
-16
-12
-8
-4
0
4
Input Power (dBm)
Ga
in
(
d
B
)
-4
0
4
8
12
16
O
ut
put
P
ow
e
r
(dBm
)
Output Power
Gain
相關PDF資料
PDF描述
AGA20BP ELECTRIC FUSE, 20A, 32VAC, 32VDC, INLINE/HOLDER
AGA15BP ELECTRIC FUSE, 15A, 32VAC, 32VDC, INLINE/HOLDER
AGA2BP ELECTRIC FUSE, 2A, 32VAC, 32VDC, INLINE/HOLDER
AGA30BP ELECTRIC FUSE, 30A, 32VAC, 32VDC, INLINE/HOLDER
AGA3BP ELECTRIC FUSE, 3A, 32VAC, 32VDC, INLINE/HOLDER
相關代理商/技術參數(shù)
參數(shù)描述
AG303-63PCB 功能描述:射頻開發(fā)工具 700-2400MHz Eval Brd 14dBm 20dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AG303-63TRG 制造商:TriQuint Semiconductor 功能描述:GAIN BLOCK 制造商:TriQuint Semiconductor 功能描述:AG303-63TRG
AG303-86 制造商:WJCI 制造商全稱:WJCI 功能描述:InGaP HBT Gain Block
AG303-86G 功能描述:射頻放大器 DC-6000MHz 20.5dB Gain@900MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AG303-86PCB 功能描述:射頻開發(fā)工具 700-2400MHz Eval Brd 14dBm 20dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*