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參數(shù)資料
| 型號(hào)： | AF9903MSA |
| 廠商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 4.3 A, 35 V, 0.048 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 799K |
| 代理商： | AF9903MSA |
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
Features
- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product
Product Summary
CH
BVDSS (V)
RDS(ON) (m)
ID (A)
N
35
48
4.3
P
-35
72
-3.6
Pin Assignments
SO-8
5
6
7
8
4
3
2
1
P1G
P1S/P2S
N2D/P2D
P2G
N1G
N1D/P1D
N1S/N2S
N2G
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Descriptions
Pin Name
Description
N1G
Gate (NMOS1)
N1D/P1D
Drain(NMOS1) / Drain(PMOS1)
N1S/N2S
Source(NMOS1) / Source(NMOS2)
N2G
Gate (NMOS2)
P2G
Gate (PMOS2)
N2D/P2D
Drain(NMOS2) / Drain(PMOS2)
P1S/P2S
Source(PMOS1) / Source(PMOS2)
P1G
Gate (PMOS1)
Ordering information
A X 9903M X X
PN
Package
Feature
F :MOSFET
S: SO-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
P1S
P2S
N1S
N2S
N2G
N1G
P1G
P2G
P1N1D
P2N2D
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