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參數(shù)資料
| 型號(hào)： | AF9435PSL |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 262K |
| 代理商： | AF9435PSL |
AF9435P
P-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
2/5
Absolute Maximum Ratings
(T
A
=25oC unless otherwise noted)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Rating
-30
±25
±6.5
±5.2
±30
-1.6
3.1
2.0
-55 to 150
Units
V
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Continuous Source Current (Diode Conduction)
(Note 1)
A
I
DM
I
S
A
A
T
A
=25oC
T
A
=70oC
P
D
Power Dissipation
(Note 1)
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
oC
Thermal Resistance Ratings
Symbol
R
θ
JC
Maximum Junction-to-Case
(Note 1)
R
θ
JA
Maximum Junction-to-Ambient
(Note 1)
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25oC unless otherwise noted)
Parameter
Maximum
25
40
Units
oC/W
oC/W
t
<
5 sec
t
<
5 sec
Limits
Typ.
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=0V, V
GS
=±25V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V,
T
J
=55oC
V
DS
=-5V, V
GS
=-10V
V
GS
=-10V, I
D
=-5.7A
V
GS
=-4.5V, I
D
=-5.0A
V
GS
=-10V, I
D
=-5.7A,
T
J
=55oC
V
DS
=-15V, I
D
=-5.7A
I
S
=-2.1A, V
GS
=0V
-30
-1
-
-
-
-
-3
V
V
nA
-1.6
-
-
±100
-1
I
DSS
Zero Gate Voltage Drain Current
-
-
-5
uA
I
D(on)
On-State Drain Current
(Note 3)
-30
-
-
-
-
A
38
54
49
69
r
DS(on)
Drain-Source On-Resistance
(Note 3)
-
42
54
m
g
fs
V
SD
Forward Tranconductance
(Note 3)
Diode Forward Voltage
Dynamic
(Note 4)
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Switching
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
Note 3:
Pulse test: PW
<
300us duty cycle
<
2%.
Note 4:
Guaranteed by design, not subject to production testing.
-
-
19
-0.7
-
S
V
-1.2
-
-
-
6
11
-
-
2.0
2.7
V
DS
=-15V, V
GS
=-4.5V,
I
D
=-5.7A
nC
-
-
-
-
7
13
14
9
14
24
25
17
V
DD
=-15, R
L
=15
,
I
D
=-1A, V
GEN
=-10V,
R
G
=6
nS
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