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參數(shù)資料
| 型號： | AF9412NSA |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:100; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:23-35 RoHS Compliant: No |
| 中文描述： | N溝道30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 367K |
| 代理商： | AF9412NSA |
AF9412N
N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
2/5
Absolute Maximum Ratings
(T
A
=25oC unless otherwise noted)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Rating
30
±20
9.4
7.4
30
1.6
3.1
2.2
-55 to 150
Units
V
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Continuous Source Current (Diode Conduction)
(Note 1)
A
I
DM
I
S
A
A
T
A
=25oC
T
A
=70oC
P
D
Power Dissipation
(Note 1)
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
oC
Thermal Resistance Ratings
Symbol
R
θ
JC
Maximum Junction-to-Case
(Note 1)
R
θ
JA
Maximum Junction-to-Ambient
(Note 1)
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25oC unless otherwise noted)
Parameter
Maximum
25
40
Units
t
≤
5 sec
t
≤
5 sec
oC/W
Limits
Typ.
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
Static
V
(BR)DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA
V
GS(th)
Gate-Threshold Voltage
I
GSS
Gate-Body Leakage
30
1
-
-
-
20
-
-
-
-
-
V
V
nA
V
DS
=V
GS
, I
D
=250uA
V
DS
=0V, V
GS
=20V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, T
J
=55oC
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=9.2A
V
GS
=4.5V, I
D
=8A
V
GS
=10V, I
D
=9.2A, T
J
=55oC
V
DS
=15V, I
D
=9.2A
I
S
=2.3A, V
GS
=0V
1.95
-
-
-
-
17
29
20
3.0
±100
1
25
-
22
36
27
I
DSS
Zero Gate Voltage Drain Current
uA
I
D(on)
On-State Drain Current
(Note 3)
A
r
DS(on)
Drain-Source On-Resistance
(Note 3)
m
g
fs
V
SD
Forward Transconductance
(Note 3)
Diode Forward Voltage
Dynamic
(Note 4)
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Switching
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
Source-Drain Reverse Recovery
Time
Note 3:
Pulse test: PW
≤
300us duty cycle
≤
2%.
Note 4:
Guaranteed by design, not subject to production testing.
-
40
-
S
-
0.7
1.1
V
-
-
-
4.7
1.7
1.4
8
-
-
V
DS
=15V, V
GS
=4.5V,
I
D
=7A
nC
-
-
-
-
16
5
23
3
21
10
37
6
V
DD
=25V, R
L
=25
, I
D
=1A,
V
GEN
=10V
nS
t
rr
I
F
=2.3A, Di/Dt=100A/uS
-
41
80
nS
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