參數(shù)資料
型號： AF8958CSLA
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 2/4頁
文件大?。?/td> 155K
代理商： AF8958CSLA
AF8958C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
2/4
Absolute Maximum Ratings
(T
A
=25oC unless otherwise noted)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
N-Channel P-Channel
30
20
7
5.6
20
1.3
2.1
1.3
-
Units
-30
-20
-5.2
-6.8
-20
-1.3
2.1
1.3
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Continuous Source Current (Diode Conduction)
(Note 1)
A
I
DM
I
S
A
A
T
A
=25oC
T
A
=70oC
P
D
Power Dissipation
(Note 1)
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
oC
Thermal Resistance Ratings
Symbol
R
θ
JC
Maximum Junction-to-Case
(Note 1)
R
θ
JA
Maximum Junction-to-Ambient
(Note 1)
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25oC unless otherwise noted)
Parameter
Maximum
40
60
Units
oC/W
oC/W
t
<
5 sec
t
<
5 sec
Limits
Min.
Symbol
Parameter
Test Conditions
Ch
Typ.
Max.
Unit
Static
V
GS
=0V, I
D
=250uA
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=250uA
V
DS
= V
GS
, I
D
=-250uA
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=5V, V
GS
=10V
V
DS
=-5V, V
GS
=-10V
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=6A
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-4A
V
DS
=15V, I
D
=7A
V
DS
=-15V, I
D
=-5A
N
P
N
P
N
P
N
P
N
P
30
-30
1
-1.0
-
-
-
-
20
-20
-
-
-
-
-
-
-
-
-
-
3
-3
V
(BR)DSS
Drain-Source breakdown Voltage
V
1.95
-1.7
-
-
-
-
-
-
19
24
42
65
25
10
V
GS(th)
Gate-Threshold Voltage
V
±100
±100
1
-1
-
-
28
40
52
80
-
-
I
GSS
Gate-Body Leakage
nA
I
DSS
Zero Gate Voltage Drain Current
uA
I
D(on)
On-State Drain Current
(Note 3)
A
N
r
DS(on)
Drain-Source On-Resistance
(Note 3)
P
m
N
P
g
fs
Forward Tranconductance
(Note 3)
S
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