參數(shù)資料
型號： AF70N03
英文描述： N-Channel Enhancement Mode Power MOSFET
中文描述： N溝道增強模式功率MOSFET
文件頁數(shù)： 2/5頁
文件大?。?/td> 453K
代理商： AF70N03
AF70N03
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Aug 10, 2005
2/5
Parameter
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
T
A
=25oC
T
A
=100oC
I
D
Continuous Drain Current, V
GS
=10V
A
I
DM
Pulsed Drain Current
(Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
A
W
T
A
=25oC
P
D
W/oC
oC
oC
T
STG
T
J
Thermal Data
Symbol
R
θ
JC
R
θ
JA
Electrical Characteristics
(T
J
=25oC unless otherwise noted)
Parameter
Maximum
2.8
110
Units
oC/W
oC/W
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Limits
Typ.
-
Symbol
Parameter
Test Conditions
Min.
30
Max.
-
Unit
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(T
J
=25oC)
Drain-Source Leakage
Current(T
J
=175oC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, I
D
=250uA
Reference to 25oC,
I
D
=1mA
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
DS
= V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
BV
DSS
/
T
J
-
0.032
-
V/oC
-
-
1
-
-
-
-
9
18
3
-
R
DS(ON)
m
V
GS(th)
g
fs
V
S
35
V
DS
=30V, V
GS
=0V
-
-
1
I
DSS
V
DS
=24V, V
GS
=0V
-
-
250
uA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=±20V
I
D
=33A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=33A
R
G
=3.3
, V
GS
=10V
R
D
=0.45
V
GS
=0V
V
DS
=25V,
f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
±100
-
-
-
-
-
-
-
-
-
-
nA
16.5
5
10.3
8.2
105
21.4
8.5
1485
245
170
nC
nS
pF
Source-Drain Diode
Symbol
Continuous Source Current (Body
Diode)
Pulsed Source Current (Body Diode)
(Note 1)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S
V
D
=V
G
=0V, V
S
=1.3V
-
-
60
A
I
SM
-
-
195
A
V
SD
Forward On Voltage
(Note 2)
T
J
=25oC, I
S
=60A,
V
GS
=0V
-
-
1.3
V
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