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參數(shù)資料
| 型號： | AF6930NSLA |
| 英文描述： | N-Channel Enhancement Mode Power MOSFET |
| 中文描述： | N溝道增強模式功率MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 513K |
| 代理商： | AF6930NSLA |
AF6930N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Anachip Corp.
www.anachip.com.tw Rev. 1.2 Sep 5, 2005
2/5
Parameter
Rating
30
±20
5
4
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
T
A
=25oC
I
D
Continuous Drain Current
(Note 1)
T
A
=70oC
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
A
I
DM
A
W
P
D
T
A
=25oC
W/oC
oC
oC
T
STG
T
J
Thermal Data
Symbol
Rthj-amb
Electrical Characteristics
at T
J
=25oC unless otherwise specified
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
C)
I
DSS
Drain-Source Leakage Current
(T
J
=70
C)
I
GSS
Gate-Source Leakage
Q
g
Total Gate Charge
(Note 3)
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain (“Miller”) Charge
t
d(on)
Turn-On Delay Time
(Note 3)
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
Parameter
Continuous Source Current
(Body Diode)
Parameter
Maximum
62.5
Units
oC/W
Thermal Resistance Junction-ambient
(Note 1)
Max.
Test Conditions
Min.
30
Typ.
-
Max.
-
Units
V
BV
DSS
/
T
J
Reference to 25
o
C,
I
D
=1mA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3.9A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=5A
-
0.037
-
V/
o
C
-
-
1
-
-
-
-
6
50
80
3
-
R
DS(ON)
m
V
S
V
DS
=30V, V
GS
=0V
-
-
1
V
DS
=24V, V
GS
=0V
-
-
25
uA
V
GS
=±20V
I
D
=5A,
V
DS
=15V,
V
GS
=5V
V
DS
I
D
=1.5A,
R
G
=3.3
, V
GS
=10V
R
D
=10
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
±100
-
-
-
-
-
-
-
-
-
-
nA
6.1
1.4
3.3
6.7
6.4
22.1
2.1
240
145
55
nC
ns
pF
Test Conditions
Min.
Typ.
Max.
Unit
I
S
V
D
=V
G
=0V, V
S
=1.2V
-
-
1.67
V
V
SD
Forward On Voltage
(Note 3)
T
J
=25oC, I
S
=1.7A,
V
GS
=0V
-
-
1.2
V
Note 1:
Surface mounted on 1 in
2
copper pad of FR4 board; 135
o
C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
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