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參數(shù)資料
| 型號： | ADS7805U |
| 英文描述： | CMOS Quad 2-Input NOR Gate 14-PDIP -55 to 125 |
| 中文描述： | 16位10ms的采樣CMOS模擬數(shù)字轉(zhuǎn)換器 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 135K |
| 代理商： | ADS7805U |
ADS7805
3
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: V
..............................................................................
±
25V
CAP .................................... +V
ANA
+0.3V to AGND2 –0.3V
REF ..........................................Indefinite Short to AGND2,
Momentary Short to V
Ground Voltage Differences: DGND, AGND1, AGND2 ...................
±
0.3V
V
ANA
....................................................................................................... 7V
V
DIG
to V
.....................................................................................+0.3V
V
....................................................................................................... 7V
Digital Inputs ............................................................ –0.3V to +V
+0.3V
Maximum Junction Temperature ................................................... +165
°
C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s)................................................ +300
°
C
PACKAGE INFORMATION
PACKAGE DRAWING
NUMBER
(1)
PRODUCT
PACKAGE
ADS7805P
ADS7805PB
ADS7805U
ADS7805UB
Plastic DIP
Plastic DIP
SOIC
SOIC
246
246
217
217
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-
Brown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
SPECIFICATIONS
(CONT)
ELECTRICAL
T
A
= –25
°
C to +85
°
C, f
S
= 100kHz, V
DIG
= V
ANA
= +5V, using internal reference, unless otherwise specified.
ADS7805P, U
ADS7805PB, UB
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Specified Performance
V
DIG
V
ANA
I
DIG
I
Power Dissipation
Must be
≤
V
ANA
+4.75
+4.75
+5
+5
0.3
16
+5.25
+5.25
6
6
6
6
6
6
6
6
V
V
mA
mA
mW
f
S
= 100kHz
100
6
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
Thermal Resistance (
θ
JA
)
Plastic DIP
SOIC
–25
–55
–65
+85
+125
+150
6
6
6
6
6
6
°
C
°
C
°
C
75
75
6
6
°
C/W
°
C/W
NOTES: (1) LSB means Least Significant Bit. For the 16-bit,
±
10V input ADS7805, one LSB is 305
μ
V. (2) Typical rms noise at worst case transitions and
temperatures. (3) As measured with fixed resistors shown in Figure 4. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full
Scale or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes
the effect of offset error. (5) All specifications in dB are referred to a full-scale
±
10V input. (6) Full-Power Bandwidth defined as Full-Scale input frequency at which
Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input overvoltage.
MINIMUM
SIGNAL-TO-
(NOISE +
DISTORTION)
RATIO (dB)
MAXIMUM
LINEARITY
ERROR (LSB)
SPECIFICATION
TEMPERATURE
RANGE
PRODUCT
PACKAGE
ADS7805P
ADS7805PB
ADS7805U
ADS7805UB
±
4
±
3
±
4
±
3
83
86
83
86
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
Plastic DIP
Plastic DIP
SOIC
SOIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADS7805UB | 16-Bit 10ms Sampling CMOS ANALOG-to-DIGITAL CONVERTER |
| ADS7806 | CMOS Quad 2-Input NOR Gate 14-SOIC -55 to 125 |
| ADS7806P | CMOS Quad 2-Input NOR Gate 14-SOIC -55 to 125 |
| ADS7806PB | Low-Power 12-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER |
| ADS7806U | Low-Power 12-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADS7805U/1K | 功能描述:模數(shù)轉(zhuǎn)換器 - ADC 16-Bit 10us Sampling CMOS RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 結(jié)構(gòu):Sigma-Delta 轉(zhuǎn)換速率:125 SPs to 8 KSPs 分辨率:24 bit 輸入類型:Differential 信噪比:107 dB 接口類型:SPI 工作電源電壓:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-32 |
| ADS7805U/1KE4 | 功能描述:模數(shù)轉(zhuǎn)換器 - ADC 16-Bit 10us Sampling CMOS RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 結(jié)構(gòu):Sigma-Delta 轉(zhuǎn)換速率:125 SPs to 8 KSPs 分辨率:24 bit 輸入類型:Differential 信噪比:107 dB 接口類型:SPI 工作電源電壓:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-32 |
| ADS7805U/1KG4 | 功能描述:IC 16BIT 100KHZ SMPL ADC 28-SOIC 制造商:texas instruments 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 位數(shù):16 采樣率（每秒）:100k 輸入數(shù):1 輸入類型:單端 數(shù)據(jù)接口:并聯(lián) 配置:S/H-ADC 無線電 - S/H:ADC:1:1 A/D 轉(zhuǎn)換器數(shù):1 架構(gòu):SAR 參考類型:外部， 內(nèi)部 電壓 - 電源，模擬:5V 電壓 - 電源，數(shù)字:5V 特性:- 工作溫度:-25°C ~ 85°C 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:28-SOIC 基本零件編號:ADS7805 標(biāo)準(zhǔn)包裝:1,000 |
| ADS7805UB | 功能描述:模數(shù)轉(zhuǎn)換器 - ADC 16-Bit 10us Sampling CMOS RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 結(jié)構(gòu):Sigma-Delta 轉(zhuǎn)換速率:125 SPs to 8 KSPs 分辨率:24 bit 輸入類型:Differential 信噪比:107 dB 接口類型:SPI 工作電源電壓:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-32 |
| ADS7805UB/1K | 功能描述:模數(shù)轉(zhuǎn)換器 - ADC 16-Bit 10us Sampling CMOS RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 結(jié)構(gòu):Sigma-Delta 轉(zhuǎn)換速率:125 SPs to 8 KSPs 分辨率:24 bit 輸入類型:Differential 信噪比:107 dB 接口類型:SPI 工作電源電壓:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-32 |
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