參數(shù)資料
型號(hào)： ADM809MART
廠商： Analog Devices, Inc.
英文描述： SRAM Nonvolatile Controller IC for 4 SRAM Banks 16-SOIC -40 to 85
中文描述： 微處理器監(jiān)控電路的3引腳SOT - 23
文件頁數(shù)： 2/6頁
文件大?。?/td> 172K
代理商： ADM809MART
–2–
REV. 0
ADM809/ADM810–SPECIFICATIONS
Parameter
Min
Typ
Max
Units
Test Conditions/Comments
V
CC
Operating Voltage Range
1.0
1.2
5.5
5.5
60
50
100
100
V
V
μ
A
μ
A
μ
A
μ
A
T
A
= 0
°
C to +70
°
C
T
A
= –40
°
C to +105
°
C
V
CC
< 5.5 V, ADM8_L/M, T
A
= –40
°
C to +85
°
C
V
CC
< 3.6 V, ADM8_R/S/T, T
A
= –40
°
C to +85
°
C
V
CC
< 5.5 V, ADM8_L/M, T
A
= +85
°
C to +105
°
C
V
CC
< 3.6 V, ADM8_R/S/T, T
A
= +85
°
C to +105
°
C
Supply Current
24
17
RESET THRESHOLD
Reset Voltage Threshold
ADM8_L
ADM8_L
ADM8_L
ADM8_M
ADM8_M
ADM8_M
ADM8_J
ADM8_ J
ADM8_ J
ADM8_T
ADM8_T
ADM8_T
ADM8_S
ADM8_S
ADM8_S
ADM8_R
ADM8_R
ADM8_R
4.56
4.5
4.40
4.31
4.25
4.16
3.93
3.89
3.80
3.04
3.00
2.92
2.89
2.85
2.78
2.59
2.55
2.50
4.63
4.70
4.75
4.86
4.45
4.5
4.56
4.06
4.10
4.20
3.11
3.15
3.23
2.96
3.00
3.08
2.66
2.70
2.76
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
A
= +25
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
T
A
= +25
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
T
A
= +25
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
T
A
= +25
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
T
A
= +25
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
T
A
= +25
°
C
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
4.38
4.00
3.08
2.93
2.63
Reset Threshold Temperature Coefficient
V
CC
to Reset Delay
30
20
ppm/
°
C
μ
s
V
CC
= V
TH
to (V
TH
–100 mV)
Reset Active Timeout Period
140
100
240
560
840
ms
ms
T
A
= –40
°
C to +85
°
C
T
A
= +85
°
C to +105
°
C
RESET
Output Voltage Low (ADM809)
0.3
0.4
0.3
V
V
V
V
CC
= V
TH
min, I
SINK
= 1.2 mA, ADM809R/S/T
V
CC
= V
TH
min, I
SINK
= 3.2 mA, ADM809L/M
V
CC
>1.0 V, I
SINK
= 50
μ
A
RESET
Output Voltage High (ADM809)
0.8 V
CC
V
CC
–1.5
V
V
V
CC
> V
TH
max, I
SOURCE
= 500
μ
A, ADM809R/S/T
V
CC
> V
TH
max, I
SOURCE
= 800
μ
A, ADM809L/M
RESET Output Voltage Low (ADM810)
0.3
0.4
V
V
V
CC
= V
TH
min, I
SINK
= 1.2 mA, ADM810R/S/T
V
CC
= V
TH
min, I
SINK
= 3.2 mA, ADM810L/M
RESET Output Voltage High (ADM810)
0.8 V
CC
V
1.8 V < V
CC
< V
TH
min, I
SOURCE
= 150
μ
A
(V
CC
= Full Operating Range, T
A
= T
MIN
to T
MAX
, V
CC
typ = 5 V for L/M/J, 3.3 V
for T/S, 3 V for R Models unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25
°
C unless otherwise noted)
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
RESET
,
RESET
. . . . . . . . . . . . . . . . . . –0.3 V to Vcc + 0.5 V
Input Current
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Output Current
RESET
,
RESET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Rate of Rise, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V/
μ
s
Power Dissipation, RT-3 SOT-23 . . . . . . . . . . . . . . . . 320 mW
Derate by 4 mW/
°
C above +70
°
C
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 333
°
C/W
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300
°
C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
Storage Temperature Range . . . . . . . . . . . . . –65
°
C to +150
°
C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum ratings for
extended periods of time may affect device reliability.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADM809/ADM810 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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