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參數(shù)資料
| 型號： | ADM1181AARWZ-REEL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TXRX RS-232 5V 15KV 16SOIC |
| 標準包裝： | 1,000 |
| 類型： | 收發(fā)器 |
| 驅(qū)動器/接收器數(shù)： | 2/2 |
| 規(guī)程： | RS232 |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應商設備封裝： | 16-SOIC W |
| 包裝： | 帶卷 (TR) |
ADM202E/ADM1181A
Rev. C | Page 7 of 16
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM202E/ADM1181A use protective clamping structures
on all inputs and outputs to clamp the voltage to a safe level and
dissipate the energy present in electrostatic (ESD) and electrical
fast transients (EFT) discharges. A simplified schematic of the
protection structure is shown in Figure 8 and Figure 9. Each
input and output contains two back-to-back high speed
clamping diodes. During normal operation with maximum
RS-232 signal levels, the diodes have no effect because one or
the other is reverse biased depending on the polarity of the signal.
However, if the voltage exceeds about 50 V in either direction,
reverse breakdown occurs and the voltage is clamped at this level.
The diodes are large p-n junctions that are designed to handle
instantaneous current surges that exceed several amperes.
The transmitter outputs and receiver inputs have a similar
protection structure. The receiver inputs can dissipate some of
the energy through the internal 5 k resistor to GND, as well as
through the protection diodes.
The protection structure achieves ESD protection up to ±15 kV
and EFT protection up to ±2 kV on all RS-232 I/O lines. The
methods used to test the protection scheme are discussed in the
(IEC1000-4-4) sections.
RIN
RX
D1
D2
RECEIVER
INPUT
R1
00066-008
Figure 8. Receiver Input Protection Scheme
RX
D1
D2
TRANSMITTER
OUTPUT
TOUT
00066-009
Figure 9. Transmitter Output Protection Scheme
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