參數(shù)資料
型號(hào): ADM1051AJRZ
廠商: ANALOG DEVICES INC
元件分類: 穩(wěn)壓器
英文描述: DUAL SWITCHING CONTROLLER, PDSO8
封裝: SOIC-8
文件頁數(shù): 3/10頁
文件大?。?/td> 176K
代理商: ADM1051AJRZ
REV. 0
ADM1051/ADM1051A
–3–
ABSOLUTE MAXIMUM RATINGS
*
(T
A
= 25
°
C unless otherwise noted)
V
CC
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 V
SHDN1
,
SHDN2
to GND . . . . . . . . –0.3 V to (V
CC
+ 0.3 V)
SENSE 1, SENSE 2 to GND . . . . . . . . . . . –0.3 V to +5.5 V
FORCE 1, FORCE 2 . . . . . . . Short-Circuit to GND or V
CC
Continuous Power Dissipation (T
A
= 70
°
C) . . . . . . . 650 mW
8-Lead SOIC (Derate 8.3 mW/
°
C Above 70
°
C)
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . 0
°
C to 70
°
C
Storage Temperature Range . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300
°
C
*
This is a stress rating only; functional operation of the device at these or any other
conditions above those indicated in the operation sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended
periods of time may affect reliability.
THERMAL CHARACTERISTICS
8-Lead Small Outline Package:
θ
JA
= 150
°
C/W
ORDERING GUIDE
Temperature
Range
0
°
C to 70
°
C
0
°
C to 70
°
C
Package
Description
Package
Option
Model
ADM1051JR
ADM1051AJR
8-Lead SOIC
8-Lead SOIC
R-8
R-8
PIN FUNCTION DESCRIPTIONS
Pin
No.
Mnemonic
Function
1
FORCE 2
Output of Channel 2 control amplifier
to gate of external N-channel MOSFET.
Input from source of external MOSFET
to inverting input of Channel 2 control
amplifier, via output voltage-setting
feedback resistor network.
Digital Input. Active-low shutdown
control with 50
μ
A internal pull-up. The
output of Channel 2 control amplifier goes
to ground when
SHDN2
is taken low.
Device Ground Pin.
Digital Input. Active-low shutdown con-
trol with 50
μ
A internal pull-up. See text for
more details of
SHDN1
functionality.
Input from source of external MOSFET to
inverting input of Channel 1 control ampli-
fier, via output voltage-setting feedback
resistor network.
Output of Channel 1 control amplifier to
gate of external N-channel MOSFET.
12 V Supply.
2
SENSE 2
3
SHDN2
4
5
GND
SHDN1
6
SENSE 1
7
FORCE 1
8
V
CC
SHDN1
V
CC
ADM1051/
ADM1051A
SHDN2
1 F
LEAVE OPEN OR
CONNECT TO
LOGIC SIGNALS
IF SHUTDOWN
REQUIRED
PHD55N03LT
FORCE 2
SENSE 2
100 F
2 100 F
V
OUT1
FORCE 1
SENSE 1
V
IN
3.3V
12V
MTD3055VL
100 F
2 100 F
V
OUT2
V
IN
3.3V
Figure 1. Test Circuit
PIN CONFIGURATION
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
FORCE 2
SENSE 2
SHDN2
V
CC
FORCE 1
SENSE 1
SHDN1
GND
ADM1051/
ADM1051A
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body a
nd test equipment and can discharge without detection.
Although the ADM1051/ADM1051A features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
WARNING!
ESD SENSITIVE DEVICE
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