參數(shù)資料
型號: ADG411BRU
廠商: ANALOG DEVICES INC
元件分類: 運(yùn)動(dòng)控制電子
英文描述: LC2MOS Precision Quad SPST Switches
中文描述: QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16
封裝: MO-153AB, TSSOP-16
文件頁數(shù): 4/8頁
文件大?。?/td> 156K
代理商: ADG411BRU
ADG411/ADG412/ADG413
REV. A
–4–
ORDE RING GUIDE
Model
l
T emperature Range
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
Package Option
2
ADG411BN
ADG411BR
ADG411T Q
ADG411BRU
ADG412BN
ADG412BR
ADG412T Q
ADG413BN
ADG413BR
N-16
R-16A
Q-16
RU-16
N-16
R-16A
Q-16
N-16
R-16A
NOT ES
1
T o order MIL-ST D-883, Class B processed parts, add /883B to T grade part
numbers.
2
N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); RU= T hin Shrink Small
Outline (T SSOP); Q = Cerdip.
ABSOLUT E MAX IMUM RAT INGS
1
(T
A
= +25
°
C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
V
L
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Analog, Digital Inputs
2
. . . . . . . . . . . V
SS
–2 V to V
DD
+2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating T emperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Extended (T Version) . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
Storage T emperature Range . . . . . . . . . . . . . –65
°
C to +150
°
C
Junction T emperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°
C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . . . . . 76
°
C/W
Lead T emperature, Soldering (10 sec) . . . . . . . . . . . +300
°
C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . . . . 117
°
C/W
Lead T emperature, Soldering (10 sec) . . . . . . . . . . . +260
°
C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . . . . . 77
°
C/W
T SSOP Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . . . . 115
°
C/W
θ
JC
T hermal Impedance . . . . . . . . . . . . . . . . . . . . . . 35
°
C/W
Lead T emperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
NOT ES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. T his is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
T E RMINOLOGY
V
DD
V
SS
Most positive power supply potential.
Most negative power supply potential in dual
supplies. In single supply applications, it may
be connected to GND.
Logic power supply (+5 V).
Ground (0 V) reference.
Source terminal. May be an input or output.
Drain terminal. May be an input or output.
Logic control input.
Ohmic resistance between D and S.
Source leakage current with the switch “OFF.”
Drain leakage current with the switch “OFF.”
Channel leakage current with the switch “ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on.
Delay between applying the digital control
input and the output switching off.
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another.
A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
V
L
GND
S
D
IN
R
ON
I
S
(OFF)
I
D
(OFF)
I
D
, I
S
(ON)
V
D
(V
S
)
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
t
ON
t
OFF
t
D
Crosstalk
Off Isolation
Charge
Injection
PIN CONFIGURAT ION
(DIP/SOIC)
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
IN1
D1
S1
V
SS
GND
S4
D4
IN4
IN2
D2
S2
V
DD
V
L
S3
D3
IN3
ADG411
ADG412
ADG413
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG411/ADG412/ADG413 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. T herefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNNG
ESD SENSITIVE DEVICE
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