AD8643-EP
Rev. 0 | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
50
1000
μV
55°C < TA < +85°C
1.8
mV
+85°C < TA < +125°C, VCM = 1.5 V
1.9
mV
Input Bias Current
IB
0.25
1
pA
55°C < TA < +125°C
180
pA
Input Offset Current
IOS
0.5
pA
55°C < TA < +125°C
60
pA
Input Voltage Range
0
3
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 2.5 V
74
93
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ, VO = 0.5 to 4.5 V
80
140
V/mV
Offset Voltage Drift
ΔVOS/ΔT
55°C < TA < +125°C
2.5
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
4.95
V
IL = 1 mA, 55°C to +125°C
4.94
V
Output Voltage Low
VOL
0.05
V
IL = 1 mA, 55°C to +125°C
0.01
0.05
V
Output Current
IOUT
±6
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 5 V to 26 V
90
107
dB
Supply Current/Amplifier
ISY
195
250
μA
55°C < TA < +125°C
270
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
2
V/μs
Gain Bandwidth Product
GBP
2.5
MHz
Phase Margin
m
50
Degrees
NOISE PERFORMANCE
Voltage Noise
eN p-p
f = 0.1 Hz to 10 Hz
4.0
μV p-p
Voltage Noise Density
eN
f = 1 kHz
28.5
nV/√Hz
Current Noise Density
iN
f = 1 kHz
0.5
fA/√Hz