參數(shù)資料
型號(hào): AD842KNZ
廠商: Analog Devices Inc
文件頁(yè)數(shù): 11/16頁(yè)
文件大小: 0K
描述: IC OPAMP GP 80MHZ 100MA 14DIP
標(biāo)準(zhǔn)包裝: 25
放大器類型: 通用
電路數(shù): 1
轉(zhuǎn)換速率: 375 V/µs
增益帶寬積: 80MHz
電流 - 輸入偏壓: 3.5µA
電壓 - 輸入偏移: 300µV
電流 - 電源: 13mA
電流 - 輸出 / 通道: 100mA
電壓 - 電源,單路/雙路(±): ±5 V ~ 18 V
工作溫度: 0°C ~ 75°C
安裝類型: 通孔
封裝/外殼: 14-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 14-PDIP
包裝: 管件
AD842
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Supply Voltage
±18 V
Internal Power Dissipation1
PDIP (N-14), SOIC_W (RW-16)
1.3 W
CERDIP (Q-14)
1.1 W
Input Voltage
±VS
Differential Input Voltage
±6 V
Operating Temperature Range
CERDIP (Q-14, AD842SQ Only)
55°C to +125°C
PDIP (N-14), SOIC_W (RW-16),
CERDIP (Q-14, AD842JQ and
0°C to 70°C
Storage Temperature Range
CERDIP (Q-14, All Models)
65°C to +150°C
PDIP (N-14), SOIC_W (RW-16)
65°C to +125°C
Junction Temperature
175°C
Lead Temperature (Soldering 60 sec)
300°C
1
Maximum internal power dissipation is specified so that TJ does not exceed
150°C at an ambient temperature of 25°C.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
Table 3.
Package
θJC
θJA
θSA
Unit
14-Lead PDIP
30
100
°C/W
14-Lead CERDIP
30
110
38
°C/W
16-Lead SOIC_W
30
100
°C/W
ESD CAUTION
METALIZATION PHOTOGRAPH
Figure 3. Contact Factory for Latest Dimensions,
Dimensions Shown in Inches and (Millimeters)
OUTPUT
V+
V–
0.067
(1.69)
BALANCE
0.106 (2.68)
BALANCE
+INPUT
–INPUT
09477-
003
Rev. F | Page 4 of 16
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