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參數(shù)資料
| 型號： | AD8092ARMZ-REEL7 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 運動控制電子 |
| 英文描述： | Low Cost, High Speed Rail-to-Rail Amplifiers |
| 中文描述： | DUAL OP-AMP, 27000 uV OFFSET-MAX, PDSO8 |
| 封裝： | LEAD FREE, MO-187AA, MSOP-8 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 283K |
| 代理商： | AD8092ARMZ-REEL7 |
AD8091/AD8092
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Power Dissipation
Common-Mode Input Voltage
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature Range (Soldering 10 sec)
Rev. B | Page 7 of 20
Rating
12.6 V
See Figure 4
±V
S
±2.5 V
See Figure 4
65°C to +125°C
40°C to +85°C
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8091/AD8092
package is limited by the associated rise in junction temperature
(T
J
) on the die. The plastic encapsulating the die locally reaches
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit may change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8091/AD8092.
Exceeding a junction temperature of 175°C for an extended
period of time can result in changes in the silicon devices,
potentially causing failure.
The still-air thermal properties of the package (θ
JA
), ambient
temperature (T
A
), and the total power dissipated in the package
(P
D
) can be used to determine the junction temperature of the die.
The junction temperature can be calculated as
(
JA
D
A
J
θ
P
T
T
×
+
=
)
The power dissipated in the package (P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
S
) times the
quiescent current (I
S
). Assuming the load (R
L
) is referenced to
midsupply, then the total drive power is V
S
/2 × I
OUT
, some of
which is dissipated in the package and some in the load
(V
OUT
× I
OUT
). The difference between the total drive power and
the load power is the drive power dissipated in the package.
(
total
power
quiescent
P
D
+
=
)
power
load
power
drive
(
)
×
+
×
=
L
OUT
R
L
OUT
R
S
S
S
D
V
V
V
2
I
V
P
2
RMS output voltages should be considered. If R
L
is referenced to
V
S
, as in single-supply operation, then the total drive power is
V
S
× I
OUT
.
If the rms signal levels are indeterminate, then consider the
worst case, when V
OUT
= V
S
/4 for R
L
to midsupply
(
)
2
4
L
S
S
S
D
R
V
I
V
P
+
×
=
In single-supply operation with R
L
referenced to V
S
, worst case
is V
OUT
= V
S
/2.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada-
tion or loss of functionality.
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