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參數(shù)資料
| 型號(hào)： | AD8079AR |
| 廠商： | ANALOG DEVICES INC |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | 18 Bit 580KSPS parallel ADC 48-TQFP -40 to 85 |
| 中文描述： | DUAL BUFFER AMPLIFIER, PDSO8 |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 348K |
| 代理商： | AD8079AR |
9
REV. A
AD8079
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
V
S
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . .–65
°
C to +125
°
C
Operating Temperature Range (A Grade) . . . –40
°
C to +85
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°
C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin SOIC Package:
θ
JA
= 160
°
C/Watt
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8079 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150
°
C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175
°
C for an extended
period can result in device failure.
While the AD8079 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150
°
C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
M
AMBIENT TEMPERATURE –
°
C
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10 20
30 40
50
60
70
1.0
0.5
80
T
J
= +150
°
C
8-PIN SOIC PACKAGE
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature
Range
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
Package
Description
Package
Option
Model
Gain
AD8079AR
AD8079AR-REEL
AD8079AR-REEL7
AD8079BR
AD8079BR-REEL
AD8079BR-REEL7
G = +2.0
G = +2.0
G = +2.0
G = +2.2
G = +2.2
G = +2.2
8-Pin Plastic SOIC
REEL SOIC
REEL 7 SOIC
8-Pin Plastic SOIC
REEL SOIC
REEL 7 SOIC
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AD8079BR | 18 Bit 580KSPS parallel ADC 48-TQFP -40 to 85 |
| AD8079AR-REEL | Dual 260 MHz Gain = +2.0 & +2.2 Buffer |
| AD8079AR-REEL7 | Dual 260 MHz Gain = +2.0 & +2.2 Buffer |
| AD8079 | Dual Low Power,High Speed, Gain = +2.0 & +2.2 Buffer(低功耗，高速，增益為2.0到2.2的雙緩沖器放大器) |
| AD808-622BRRL7 | Ic = 500 mA; Package: PG-SOT223-4; Polarity: NPN; V<sub>CEO</sub> (max): 60.0 V; P<sub>tot</sub> (max): 2,000.0 mW; h<sub>FE</sub> (min): 100.0 - 250.0; I<sub>C</sub>: 1,000.0 mA; |
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參數(shù)描述 |
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| AD8079AR-REEL | 制造商:Analog Devices 功能描述:OP Amp Dual Current Fdbk 制造商:Analog Devices 功能描述:OP Amp Dual Current Fdbk ±6V 8-Pin SOIC N T/R |
| AD8079AR-REEL7 | 制造商:Analog Devices 功能描述:OP Amp Dual Current Fdbk 制造商:Analog Devices 功能描述:OP Amp Dual Current Fdbk ±6V 8-Pin SOIC N T/R |
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