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參數(shù)資料
| 型號(hào)： | AD8031AR |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 17/20頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP VF R-R LP LDIST 8SOIC |
| 設(shè)計(jì)資源： | High Speed, Precision, Differential AC-Coupled Drive Circuit for AD7625 (CN0080) Single-Ended-to-Differential High Speed Drive Circuit for 16-Bit, 10 MSPS AD7626 ADC (CN0105) |
| 標(biāo)準(zhǔn)包裝： | 98 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 35 V/µs |
| -3db帶寬： | 80MHz |
| 電流 - 輸入偏壓： | 450nA |
| 電壓 - 輸入偏移： | 1000µV |
| 電流 - 電源： | 900µA |
| 電流 - 輸出 / 通道： | 15mA |
| 電壓 - 電源，單路/雙路(±)： | 2.7 V ~ 12 V，±1.35 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 管件 |
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AD8031/AD8032
Data Sheet
Rev. G | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
12.6 V
Internal Power Dissipation1
8-Lead PDIP (N)
1.3 W
8-Lead SOIC_N (R)
0.8 W
8-Lead MSOP (RM)
0.6 W
5-Lead SOT-23 (RJ)
0.5 W
Input Voltage (Common Mode)
±VS ± 0.5 V
Differential Input Voltage
±3.4 V
Output Short-Circuit Duration
Observe Power
Derating Curves
Storage Temperature Range (N, R, RM, RJ)
65°C to +125°C
Lead Temperature (Soldering 10 sec)
300°C
1
Specification is for the device in free air:
8-Lead PDIP: θJA = 90°C/W.
8-Lead SOIC_N: θJA = 155°C/W.
8-Lead MSOP: θJA = 200°C/W.
5-Lead SOT-23: θJA = 240°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 7.
2.0
1.5
0
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
T
IO
N
(W
)
1.0
0.5
5-LEAD SOT-23
TJ = +150°C
8-LEAD PDIP
8-LEAD SOIC
AMBIENT TEMPERATURE (°C)
8-LEAD MSOP
–50 –40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
01056-
007
Figure 7. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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