VS Min Typ Max Units POWER SUPPLY Operating Range Single Supply +4.2 +1" />
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� AD8013ARZ-14
寤犲晢锛� Analog Devices Inc
鏂囦欢闋佹暩(sh霉)锛� 6/12闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC AMP VIDEO SGL SUPP LP 14-SOIC
妯欐簴鍖呰锛� 56
鎳夌敤锛� 闆绘祦鍙嶉
闆昏矾鏁�(sh霉)锛� 3
-3db甯跺锛� 140MHz
杞�(zhu菐n)鎻涢€熺巼锛� 1000 V/µs
闆绘祦 - 闆绘簮锛� 3.5mA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 30mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 4.2 V ~ 13 V锛�±2.1 V ~ 6.5 V
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 14-SOIC锛�0.154"锛�3.90mm 瀵級
渚涙噳鍟嗚ō鍌欏皝瑁濓細 14-SOICN
鍖呰锛� 绠′欢
鐢�(ch菐n)鍝佺洰閷勯爜闈細 764 (CN2011-ZH PDF)
AD8013
Model
AD8013A
Conditions
VS
Min
Typ
Max
Units
POWER SUPPLY
Operating Range
Single Supply
+4.2
+13
V
Dual Supply
卤2.1
卤6.5
V
Quiescent Current/Amplifier
+5 V
3.0
3.5
mA
卤5 V
3.4
4.0
mA
卤6.5 V
3.5
mA
Quiescent Current/Amplifier
Power Down
+5 V
0.25
0.35
mA
卤5 V
0.3
0.4
mA
Power Supply Rejection Ratio
Input Offset Voltage
VS =
卤2.5 V to 卤5 V
70
76
dB
鈥揑nput Current
+5 V,
卤5 V
0.03
0.2
A/V
+Input Current
+5 V,
卤5 V
0.07
1.0
A/V
DISABLE CHARACTERISTICS
Off Isolation
f = 6 MHz
+5 V,
卤5 V
鈥�70
dB
Off Output Impedance
G = +1
+5 V,
卤5 V
12
pF
Turn-On Time
50
ns
Turn-Off Time
30
ns
Switching Threshold
鈥揤S + xV
1.3
1.6
1.9
V
NOTES
1The test circuit for differential gain and phase measurements on a +5 V supply is ac coupled.
Specifications subject to change without notice.
鈥�3鈥�
REV. A
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V Total
Internal Power Dissipation
2
Plastic (N) . . . . . . . . . 1.6 Watts (Observe Derating Curves)
Small Outline (R) . . . . 1.0 Watts (Observe Derating Curves)
Input Voltage (Common Mode) . . Lower of
卤V
S or
卤12.25 V
Differential Input Voltage . . . . . . . . Output
卤6 V (Clamped)
Output Voltage Limit
Maximum . . . . . . . . . Lower of (+12 V from 鈥揤S) or (+VS)
Minimum . . . . . . . . . Higher of (鈥�12.5 V from +VS) or (鈥揤S)
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range
N and R Package . . . . . . . . . . . . . . . . . . . 鈥�65
掳C to +125掳C
Operating Temperature Range
AD8013A . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥�40
掳C to +85掳C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
掳C
NOTES
1Stresses above those listed under 鈥淎bsolute Maximum Ratings鈥� may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Specification is for device in free air:
14-Pin Plastic DIP Package:
JA = 75掳C/Watt
14-Pin SOIC Package:
JA = 120掳C/Watt
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Options
AD8013AN
鈥�40
掳C to +85掳C 14-Pin Plastic DIP N-14
AD8013AR-14
鈥�40
掳C to +85掳C 14-Pin Plastic SOIC R-14
AD8013AR-14-REEL
鈥�40
掳C to +85掳C 14-Pin Plastic SOIC R-14
AD8013AR-14-REEL7
鈥�40
掳C to +85掳C 14-Pin Plastic SOIC R-14
AD8013ACHIPS
鈥�40
掳C to +85掳C Die Form
Maximum Power Dissipation
The maximum power that can be safely dissipated by the AD8013
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for the plastic encapsulated
parts is determined by the glass transition temperature of the
plastic, about 150
掳C. Exceeding this limit temporarily may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of 175
掳C for an extended period can result in
device failure.
While the AD8013 is internally short circuit protected, this may
not be enough to guarantee that the maximum junction temper-
ature is not exceeded under all conditions. To ensure proper
operation, it is important to observe the derating curves.
It must also be noted that in (noninverting) gain configurations
(with low values of gain resistor), a high level of input overdrive
can result in a large input error current, which may result in a
significant power dissipation in the input stage. This power
must be included when computing the junction temperature rise
due to total internal power.
MAXIMUM
POWER
DISSIPATION
鈥�
Watts
AMBIENT TEMPERATURE 鈥�
掳C
2.5
2.0
0.5
鈥�50
90
鈥�40 鈥�30 鈥�20
0
10 20
30
40 50
60 70
80
1.5
1.0
鈥�10
TJ = +150掳C
14-PIN DIP PACKAGE
14-PIN SOIC
Maximum Power Dissipation vs. Ambient Temperature
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