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參數(shù)資料
| 型號(hào)： | ACT102H-600D |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | AC Thyristor power switch |
| 封裝： | ACT102H-600D<SOT96-1 (SO8)|<<http://www.nxp.com/packages/SOT96-1.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | ACT102H-600D |
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ACT102H-600D
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 23 December 2010
3 of 14
NXP Semiconductors
ACT102H-600D
AC Thyristor power switch
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
I
T(RMS)
Parameter
repetitive peak off-state voltage
RMS on-state current
Conditions
Min
-
-
Max
600
0.2
Unit
V
A
full sine wave; T
amb
≤
100 °C;
see
Figure 3
; see
Figure 1
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4
; see
Figure 5
t
p
= 10 ms; sine-wave pulse
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/μs
t = 20
μ
s
positive applied gate voltage
I
TSM
non-repetitive peak on-state
current
-
8.8
A
-
8
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
V
PP
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
peak pulse voltage
-
-
-
-
-
-
-40
-
-
0.32
50
1
15
2
0.1
150
125
2
A
2
s
A/μs
A
V
W
W
°C
°C
kV
over any 20 ms period
T
j
≤
25 °C; non-repetitive, off-state;
see
Figure 2
Fig 1.
RMS on-state current as a function of solder
point temperature; maximum values
Fig 2.
Test circuit for inductive and resistive loads
with conditions equivalent to IEC 61000-4-5
T
a
(
°
C)
50
150
100
0
50
003aaf740
0.08
0.16
0.24
I
T(RMS)
(A)
0
0.04
0.12
0.20
003aad077
L
R
150
Ω
Load Model
5
μ
H
2
Ω
220
Ω
RG
Surge Generator
Open Circuit Voltage
1.2
μ
s/50
μ
s waveform
Surge pulse
IEC 61000-4-5 Standards
RGen
DUT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ACT102H-600D,118 | 功能描述:雙向可控硅 600V 0.2A +125C RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| ACT102H-600D118 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| ACT1050P-25.000MHZ | 制造商:-- 功能描述:ELECTRONIC COMPONENT 制造商:Act. 功能描述:ELECTRONIC COMPONENT |
| ACT1073 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:16-BIT BUS-TERMINATION ARRAY WITH BUS-HOLD FUNCTION |
| ACT108-600D | 制造商:NXP Semiconductors 功能描述:TRIAC AC 0.8A 600V TO92 制造商:NXP Semiconductors 功能描述:TRIAC, AC, 0.8A, 600V, TO92 制造商:NXP Semiconductors 功能描述:TRIAC, AC, 0.8A, 600V, TO92; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max (QI), Igt:5mA; On State RMS Current IT(rms):800mA; Peak Non Rep Surge Current Itsm 50Hz:8.8A; Gate Trigger Voltage Max Vgt:900mV; ;RoHS Compliant: Yes |
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