參數(shù)資料
型號(hào): AAT1154IAS-2.5-T1
廠商: Advanced Analogic Technologies, Inc.
英文描述: 1MHz 3A Buck DC/DC Converter
中文描述: 1MHz的第3A降壓DC / DC轉(zhuǎn)換器
文件頁(yè)數(shù): 13/18頁(yè)
文件大?。?/td> 482K
代理商: AAT1154IAS-2.5-T1
AAT1154
1MHz 3A Buck DC/DC Converter
1154.2003.08.0.91
13
Sumida inductor Series CDRH6D38.
AAT1154 Junction Temperature
Diode
Given a case to ambient thermal resistance of
120°C/W from the manufacturer's data sheet,
T
J(MAX)
of the diode is
Output Capacitor
The output capacitor value required for sufficient
loop phase margin depends on the type of capaci-
tor selected. For a low ESR ceramic capacitor a
minimum value of 200μF is required. For a low
ESR tantalum capacitor lower values are accept-
able. While the relatively higher ESR associated
with the tantalum capacitor will give more phase
margin and a more damped transient response, the
output voltage ripple will be higher.
The 120μF Vishay 594D tantalum capacitor has an
ESR of 85 m
and a ripple current rating of 1.48
Arms in a C case size. Although smaller case sizes
are sufficiently rated for this ripple current, their
ESR level would result in excessive output ripple.
The ESR requirement for a tantalum capacitor can
be estimated by
Two or three 1812 X5R 100uF 6.3V ceramic
capacitors in parallel also provide sufficient phase
margin. The low ESR and ESL associated with
ceramic capacitors also reduces output ripple sig-
nificantly over that seen with tantalum capacitors.
Temperature rise due to ESR ripple current dissi-
pation is also reduced.
100
0.82A
121
V
=
mV
ESR
m
I
=
(
)
(
·
)
1
2
3
1
3.65
H
1.7
MHz
240
1.5
μ
· 1
5
2
3
OUT
V
FWD
V
IN
OUT
V
RMS
I
IN
V
L F V
· ·
V
V
·
mArms
V
+
-
=
·
=
·
·
·
=
·
J(MAX)
T
° +
70
120
/
0.354
112
AMB
T
JA
P
C
°
C W
°
W
C
=
+
Θ
=
·
=
·
0.35
1.01
.354
DIODE
P
FW
DIODE
I
V
V
A
W
=
·
=
·
=
1
3.3
5
3
1
1.02
O
DIODE
I
O
I
IN
V
V
V
A
A
V
=
·
-
=
·
-
=
0.35
FW
V
V
=
2
750
5
5
2
0.539
ON
IN
IN
P
V
V
A
V
V
Watts
=
+
+ I
Q
·
=
+
+
·
=
70
110
/
0.54
129
J(MAX)
T
AMB
T
JA
P
C
C W
°
W
C
°
=
+
·
=
°
+
·
=
I
O
2
· R
DS(ON)
· V
O
3
2
· 65m
· 3.3V
t
SW
· F · I
O
20ns · 1MHz · 3A
μ
Θ
1
3.3
H
3.3V
5.25V
1
1.5
μ
I
1
O
O
IN
V
V
I
V
V
MHz
=
-
=
-
·
2
3A + 0.41A = 3.41A
PK
OUT
I
I
=
+
=
= 0.82A
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