參數(shù)資料
型號： A733LT1-SOT-23
廠商： 江蘇長電科技股份有限公司
英文描述： TRANSISTOR（ PNP ）
中文描述： 晶體管（進步黨）
文件頁數(shù)： 1/2頁
文件大小： 118K
代理商： A733LT1-SOT-23
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.2 W
Collector current
I
CM
: -0.15 A
Collector-base voltage
V
(BR)CBO
: -60 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -5
A
I
E
=0
-60
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -1 mA , I
B
=0
-50
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -50
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -60 V , I
E
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5 V , I
C
=0
-0.1
A
DC current gain
H
FE 1
V
CE
= -6 V, I
C
= -1mA
120
475
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= -100mA, I
B
=- 10mA
-0.18
-0.3
V
Transition frequency
f
T
V
CE
= -6 V, I
C
=-10mA
f =
30MHz
50
MHz
CLASSIFICATION OF H
FE(1)
Rank
L
H
Range
120-200
200-475
MARKING
CS
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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