參數(shù)資料
型號: A43P26161V-95UF
廠商: AMIC Technology Corporation
英文描述: 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM
中文描述: 100萬× 16位× 4個銀行的低功耗同步DRAM
文件頁數(shù): 18/44頁
文件大?。?/td> 1122K
代理商: A43P26161V-95UF
5. Write Interrupted by Precharge & DQM
A43P26161
PRELIMINARY
(July, 2005, Version 1.1)
17
AMIC Technology, Corp.
Note : 1. To inhibit invalid write, DQM should be issued.
2. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of dual banks operation.
6. Precharge
7. Auto Precharge
* Note : 1. The row active command of the precharge bank can be issued after t
RP
from this point.
The new read/write command of other active bank can be issued from this point.
At burst read/write with auto precharge,
CAS
interrupt of the same/another bank is illegal.
WR
PRE
D0
D1
D2
D3
CLK
CMD
DQ
1) Normal Write (BL=4)
t
RDL
RD
PRE
Q0
Q1
Q2
Q3
CLK
CMD
DQ(CL2)
2) Read (BL=4)
Q0
Q1
Q2
Q3
DQ(CL3)
WR
D0
D1
D2
D3
CLK
CMD
DQ
1) Normal Write (BL=4)
Note 1
RD
Q0
Q1
Q2
Q3
CLK
CMD
DQ(CL2)
2) Read (BL=4)
Q0
Q1
Q2
Q3
DQ(CL3)
Auto Precharge Starts
Note 1
Auto Precharge Starts
WR
PRE
Note 2
Note 1
D0
D1
D2
D3
Masked by DQM
CLK
CMD
DQM
DQ
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