參數(shù)資料
型號(hào): A43E16161V
廠商: AMIC Technology Corporation
英文描述: 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM
中文描述: 100萬× 16位× 2銀行低功耗同步DRAM
文件頁數(shù): 9/46頁
文件大?。?/td> 1314K
代理商: A43E16161V
A43E16161
PRELIMINARY
(August, 2005, Version 0.0)
8
AMIC Technology, Corp.
Simplified Truth Table
Command
CKEn-1 CKEn
CS
RAS
CAS
WE
DQM BA A10
/AP
A9~A0
Notes
Register
Mode Register Set
H
X
L
L
L
L
X
OP CODE
1,2
Extended Mode Register Set
H
X
L
L
L
L
L
OP CODE
1,2
Auto Refresh
H
L
3
Entry
H
L
L
L
H
X
X
3
L
H
H
H
3
Refresh
Self
Refresh
Exit
L
H
H
L
X
L
X
H
X
H
X
X
3
4
Bank Active & Row Addr.
H
X
X
V
Row Addr.
Auto Precharge Disable
L
H
L
H
4
4,5
4
4,5
6
7
8
Read &
Column Addr. Auto Precharge Enable
Auto Precharge Disable
Write &
Column Addr. Auto Precharge Enable
Burst Stop
Bank Selection
Precharge
Both Banks
H
X
L
H
L
H
X
V
Column
Addr.
H
X
L
H
L
L
X
V
Column
Addr.
H
X
L
H
H
L
X
X
V
X
L
H
H
X
L
L
H
L
X
X
L
H
X
L
H
L
H
H
X
X
H
X
V
X
X
H
X
H
X
H
X
X
H
X
V
X
H
X
X
H
X
V
X
Entry
H
L
X
Clock Suspend or
Active Power Down
Exit
L
H
X
X
Entry
H
L
X
Precharge Power Down Mode
Exit
L
H
X
X
DQM
H
V
X
L
H
L
X
H
X
H
X
H
X
L
X
No Operation Command
H
X
X
X
Deep Power Down Entry
Deep Power Down Exit
Note :
1. OP Code: Operand Code
A0~A10, BA: Program keys. (@MRS, EMRS)
2. MRS can be issued only when all banks are at precharge state.
A new command can be issued after 2 clock cycle of MRS, EMRS.
3. Auto refresh functions is same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by “Auto”.
Auto/Self refresh can be issued only when all banks are at precharge state.
4. BA: Bank select address.
5. During burst read or write with auto precharge, new read/write command cannot be issued.
Another bank read/write command can be issued at every burst length.
6. Bust stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0)
but masks the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)
8. After Deep Power Down mode exit, a full new initialization of the memory device is mandatory.
H
L
L
H
X
X
X
X
(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)
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