參數(shù)資料
型號(hào): A43E06161V-75
廠商: AMIC Technology Corporation
英文描述: 512K X 16 Bit X 2 Banks Synchronous DRAM
中文描述: 為512k × 16位× 2銀行同步DRAM
文件頁數(shù): 24/46頁
文件大?。?/td> 1289K
代理商: A43E06161V-75
A43E06161
PRELIMINARY
(July, 2005, Version 0.1)
23
AMIC Technology, Corp.
* Note : 1. All inputs can be don’t care when
CS
is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0
Bank A
1
Bank B
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
BA
Operation
0
Disable auto precharge, leave bank A active at end of burst.
0
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
1
Enable auto precharge, precharge bank B at end of burst.
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
BA
Precharge
0
0
Bank A
0
1
Bank B
1
X
Both Bank
相關(guān)PDF資料
PDF描述
A43E06161V-75F Switch Guard; For Use With:2 Position Toggle Switches; Features:MIL-G-7703 Approved, MS25224-1; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Accessory Type:Switch Guard RoHS Compliant: No
A43E06161V-75U 512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-75UF 512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95 Switch Guard; For Use With:2 Position Toggle Switches; Features:Flush Mount; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Accessory Type:Switch Guard RoHS Compliant: No
A43E06161V-95F 512K X 16 Bit X 2 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A43E06161V-75F 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-75U 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-75UF 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95F 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM