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參數(shù)資料
| 型號： | A42U2604V-80U |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4的CMOS動態(tài)RAM與江戶頁面模式 |
| 文件頁數(shù)： | 9/25頁 |
| 文件大?。?/td> | 265K |
| 代理商： | A42U2604V-80U |
A42U2604 Series
PRELIMINARY
(June, 2002, Version 0.3)
8
AMIC Technology, Inc.
AC Characteristics (continued)
(VCC = 2.5V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C or -40
°
C to +85
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=1.8V/0.8V
Output reference level: V
OH
/V
OL
=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed t
T
=2ns
-50
-60
-80
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
39
t
AWD
Column Address to
WE
Delay Time
(Read-Modify-Write)
37
-
45
-
62
-
ns
11
40
t
OEH
OE
Hold Time from
WE
8
-
10
-
14
-
ns
41
t
OEP
OE
High Pulse Width
5
-
5
-
5
-
ns
42
t
PC
Read or Write Cycle Time (EDO Page)
20
-
24
-
32
-
ns
13
43
t
CPA
Access Time from
CAS
Precharge
(EDO Page)
-
23
-
27
-
36
ns
12
44
t
CP
CAS
Precharge Time (EDO Page)
8
-
10
-
14
-
ns
45
t
PCM
EDO Page Mode RMW Cycle Time
50
-
59
-
79
-
ns
46
t
CRW
EDO Page Mode
CAS
Pulse Width
(RMW)
38
-
45
-
61
-
ns
47
t
RASP
RAS
Pulse Width (EDO Page)
50
100K
60
100K
80
100K
ns
48
t
CSR
CAS
Setup Time (
CAS
-before-
RAS
)
5
-
5
-
5
-
ns
3
49
t
CHR
CAS
Hold Time (
CAS
-before-
RAS
)
10
-
10
-
15
-
ns
3
50
t
RPC
RAS
to
CAS
Precharge Time
(
CAS
-before-
RAS
)
5
-
5
-
5
-
ns
51
t
OEZ
Output Buffer Turn-off Delay from
OE
-
3
-
5
-
10
ns
8
52
t
RASS
RAS
pulse width (
C
-B-
R
self-refresh)
100
-
100
-
100
-
μ
s
53
t
RPS
RAS
precharge time
(
C
-B-
R
self-refresh)
84
-
100
-
132
-
ns
54
t
CHS
CAS
hold time (
C
-B-
R
self-refresh)
-50
-
-50
-
-50
-
ns
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