參數(shù)資料
型號: A42U2604V-50
廠商: AMIC Technology Corporation
英文描述: 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 4米× 4的CMOS動態(tài)RAM與江戶頁面模式
文件頁數(shù): 7/25頁
文件大小: 265K
代理商: A42U2604V-50
A42U2604 Series
PRELIMINARY
(June, 2002, Version 0.3)
6
AMIC Technology, Inc.
AC Characteristics
(VCC = 2.5V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C or -40
°
C to +85
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=1.8V/0.8V
Output reference level: V
OH
/V
OL
=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed t
T
=2ns
-50
-60
-80
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
t
T
Transition Time (Rise and Fall)
1
50
1
50
1
50
ns
4, 5
1
t
RC
Random Read or Write Cycle Time
84
-
100
-
132
-
ns
2
t
RP
RAS
Precharge Time
30
-
36
-
48
-
ns
3
t
RAS
RAS
Pulse Width
50
10K
60
10K
80
10K
ns
4
t
CAS
CAS
Pulse Width
8
10K
10
10K
14
10K
ns
5
t
RCD
RAS
to
CAS
Delay Time
11
37
13
45
17
60
ns
6
6
t
RAD
RAS
to Column Address Delay Time
9
28
11
33
15
43
ns
7
7
t
RSH
CAS
to
RAS
Hold Time
8
-
10
-
14
-
ns
8
t
CSH
CAS
Hold Time
37
-
41
-
49
-
ns
9
t
CRP
CAS
to
RAS
Precharge Time
5
-
5
-
5
-
ns
10
t
ASR
Row Address Setup Time
0
-
0
-
0
-
ns
11
t
RAH
Row Address Hold Time
8
-
10
-
14
-
ns
12
t
CLZ
CAS
to Output in Low Z
3
-
3
-
3
-
ns
8
13
t
RAC
Access Time from
RAS
-
50
-
60
-
80
ns
6,7
14
t
CAC
Access Time from
CAS
-
13
-
15
-
20
ns
6, 12
15
t
AA
Access Time from Column Address
-
22
-
27
-
37
ns
7, 12
16
t
OEA
Access Time from OE
-
13
-
15
-
20
ns
17
t
AR
Column Address Hold Time from
RAS
45
-
55
-
74
-
ns
18
t
RCS
Read Command Setup Time
0
-
0
-
0
-
ns
19
t
RCH
Read Command Hold Time
0
-
0
-
0
-
ns
9
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