參數(shù)資料
型號(hào): A1323
廠商: Allegro MicroSystems, Inc.
英文描述: Ratiometric Linear Hall Effect Sensor for High-Temperature Operation
中文描述: 比例式線性霍爾效應(yīng)傳感器的高高溫作業(yè)
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 413K
代理商: A1323
4
A1321-DS Rev. 3
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
115 Northeast Cutoff, Box 15036
Allegro MicroSystems, Inc.
Ratiometric Linear Hall Effect Sensor for High-Temperature Operation
A1321/A1322/A1323
MAGNETIC CHARACTERISTICS
1,2
over operating temperature range, T
A
; V
CC
= 5 V, I
out
= –1 mA; unless otherwise noted
Characteristics
Symbol
Test Condition
A1321; T
A
= 25oC
A1322; T
A
= 25oC
A1323; T
A
= 25oC
Delta V
out(q)
as a func-
tion of temperature
Ratiometry, V
out(q)
V
out(q)(
V)
Ratiometry, Sens
Sens
(
V)
Positive Linearity
Lin+
Negative Linearity
Lin–
Symmetry
Sym
UA Package
Delta Sens at T
A
= max
5
Sens
(TAmax)
From hot to room temperature
Delta Sens at T
A
= min
5
Sens
(TAmin)
From cold to room temperature
Sensitivity Drift
6
Sens
Drift
T
A
= 25°C; after temperature cycling and over time
LH Package
Delta Sens at T
A
= max
5
Sens
(TAmax)
From hot
to room temperature
Delta Sens at T
A
= min
5
Sens
(TAmin)
From cold to room temperature
Sensitivity Drift
6
Sens
Drift
T
A
= 25°C; after temperature cycling and over time
1
Additional information on chracteristics is provided in the section Characteristics De
fi
nitions, on the next page.
2
Negative current is de
fi
ned as conventional current coming out of (sourced from) the speci
fi
ed device terminal.
3
Typical data is at T
A
= 25°C, except for
Sens, and at
x.x
Sens. Typical data are for initial design estimations only, and assume optimum
manufacturing and application conditions. Performance may vary for individual units, within the speci
fi
ed maximum and minimum limits.
In addition, the typical values vary with gain.
4
10 G = 1 millitesla.
5
After 150oC pre-bake and factory programming.
6
Sensitivity drift is the amount of recovery with time.
Min
4.750
2.969
2.375
Typ
3
5.000
3.125
2.500
Max
5.250
3.281
2.625
Units
4
mV/G
mV/G
mV/G
Sensitivity
5
Sens
V
out(q)(
T)
De
fi
ned in terms of magnetic
fl
ux density, B
±10
G
±1.5
±1.5
±1.5
±1.5
±1.5
%
%
%
%
%
–2.5
–6
1
7.5
4
2
%
%
%
–5
–3.5
5
%
%
%
8.5
2
0.328
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