參數(shù)資料
型號: 9S12DP512DGV1
英文描述: 9S12Dx512 Device Guide
中文描述: 9S12Dx512設(shè)備指南
文件頁數(shù): 101/126頁
文件大?。?/td> 1809K
代理商: 9S12DP512DGV1
MC9S12DJ64 Device User Guide — V01.17
101
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Table A-12 NVM Reliability Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
C
Data Retention at an average junction temperature of
T
Javg
= 70
°
C
t
NVMRET
15
Years
2
C Flash number of Program/Erase cycles
n
FLPE
10,000
Cycles
3
C
EEPROM number of Program/Erase cycles
(–40
°
C
T
J
0
°
C)
n
EEPE
10,000
Cycles
4
C
EEPROM number of Program/Erase cycles
(0
°
C < T
J
140
°
C)
n
EEPE
100,000
Cycles
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