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參數(shù)資料
| 型號(hào)： | 9N90G-T47-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | 9N90G-T47-T |
9N90
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-217.E
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25°C)
ID
9.0
A
Pulsed Drain Current (Note 2)
IDM
36
A
Avalanche Current (Note 2)
IAR
9.0
A
Single Pulsed(Note 3)
EAS
900
mJ
Avalanche Energy
Repetitive(Note 2)
EAR
28
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-247
160
W
TO-3P
240
Power Dissipation
TO-220F1
36
W
TO-247
1.28
W/°C
TO-3P
2.22
Linear Derating Factor
above TC = 25°C
TO-220F1
PD
0.288
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-247
50
°C/W
TO-3P
40
Junction to Ambient
TO-220F1
θJA
62.5
°C/W
TO-247
0.78
°C/W
TO-3P
0.52
Junction-to-Case
TO-220F1
θJC
3.47
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
900
V
Drain-Source Leakage Current
IDSS
VDS = 900 V, VGS = 0 V
10
μA
Forward
IGSSF
VGS = 30 V, VDS = 0 V
100
nA
Gate-Body Leakage Current
Reverse
IGSSR
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 250μA, Referenced to 25°C
0.99
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
3.0
5.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10 V, ID = 4.5 A
1.12
1.4
DYNAMIC PARAMETERS
Input Capacitance
CISS
2100 2730
pF
Output Capacitance
COSS
175
230
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
14
18
pF
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