參數(shù)資料
型號(hào)： 93C66AISNG
廠商： Microchip Technology Inc.
元件分類(lèi)： EEPROM
英文描述： 4K Microwire Compatible Serial EEPROM
中文描述： 4K的微絲兼容串行EEPROM
文件頁(yè)數(shù)： 10/24頁(yè)
文件大?。?/td> 405K
代理商： 93C66AISNG
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795B-page 10
2003 Microchip Technology Inc.
2.9
WRITE ALL (WRAL)
The Write All (
WRAL
) instruction will write the entire
memory array with the data specified in the command.
For 93AA66A/B/C and 93LC66A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C66A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL
instruction does not require an
ERAL
instruction
but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
Note:
Issuing a Start bit and then taking CS low
will clear the READY/BUSY status from
DO.
V
CC
must be
≥
4.5V for proper operation of WRAL.
FIGURE 2-10:
WRAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-11:
WRAL TIMING FOR 93C DEVICES
CS
CLK
DI
DO
HIGH-Z
1
0
0
0
1
X
X
Dx
D0
HIGH-Z
BUSY
READY
T
WL
V
CC
must be
≥
4.5V for proper operation of WRAL.
T
CSL
T
SV
T
CZ
CS
CLK
DI
DO
HIGH-Z
1
0
0
0
1
X
X
Dx
D0
HIGH-Z
BUSY
READY
T
WL
T
CSL
T
SV
T
CZ
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