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參數(shù)資料
| 型號： | 93C66A |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 4K 5.0V Automotive Temperature Microwire Serial EEPROM |
| 中文描述： | 汽車溫度4K的5.0V Microwire串行EEPROM的 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大?。?/td> | 405K |
| 代理商： | 93C66A |
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
DS21795B-page 10
2003 Microchip Technology Inc.
2.9
WRITE ALL (WRAL)
The Write All (
WRAL
) instruction will write the entire
memory array with the data specified in the command.
For 93AA66A/B/C and 93LC66A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C66A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL
instruction does not require an
ERAL
instruction
but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
Note:
Issuing a Start bit and then taking CS low
will clear the READY/BUSY status from
DO.
V
CC
must be
≥
4.5V for proper operation of WRAL.
FIGURE 2-10:
WRAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-11:
WRAL TIMING FOR 93C DEVICES
CS
CLK
DI
DO
HIGH-Z
1
0
0
0
1
X
X
Dx
D0
HIGH-Z
BUSY
READY
T
WL
V
CC
must be
≥
4.5V for proper operation of WRAL.
T
CSL
T
SV
T
CZ
CS
CLK
DI
DO
HIGH-Z
1
0
0
0
1
X
X
Dx
D0
HIGH-Z
BUSY
READY
T
WL
T
CSL
T
SV
T
CZ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93C66AEP | Fast Recovery Power Rectifier; Current Rating:125A; Forward Current:125A; Forward Current Avg Rectified, IF(AV):125A; Forward Surge Current Max, Ifsm:2500A; Forward Voltage:2.5V; Forward Voltage Max, VF:2.5V RoHS Compliant: Yes |
| 93C66AEPG | Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:1000V; Forward Current Avg Rectified, IF(AV):125A; Non Repetitive Forward Surge Current Max, Ifsm:2500A; Reverse Recovery Time, trr:0.7us |
| 93C66AESN | Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:1200V; Forward Current Avg Rectified, IF(AV):125A; Non Repetitive Forward Surge Current Max, Ifsm:2500A; Reverse Recovery Time, trr:0.7us |
| 93C66AEST | Standard Recovery Rectifier; Current Rating:125A; Forward Current:125A; Forward Voltage:2.5V; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:DO-8; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| 93C66AIMS | 4K Microwire Compatible Serial EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93C66A-E/CH | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K-16K Microwire Compatible Serial EEPROMs |
| 93C66A-E/MC | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
| 93C66A-E/MCG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
| 93C66A-E/MS | 功能描述:電可擦除可編程只讀存儲器 512x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93C66A-E/MSG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
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