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1999 Feb 17
22
Philips Semiconductors
Product specication
Cordless telephone, answering machine
line interface
UBA1707
Electronic hook-switch control (pin EHI)
VIH
HIGH-level input voltage
2.3
VCC + 0.4 V
VIL
LOW-level input voltage
VCC = 3.0 to 5.5 V
GND
0.4
0.3VCC
V
Ibias
input bias current
input level = HIGH
1
2
5
A
Transmit amplier (pins TXI+, TXI
and LN)
Z
i
input impedance
between pins TXI+ and GND
or TXI
and GND
21
k
between pins TXI+ and TXI
36
k
Gv(TX)
voltage gain from TXI+/TXI
to LN
VTXI = 50 mV (RMS)
10.6
11.6
12.6
dB
G
v(TX)(f)
voltage gain variation with
frequency referenced to 1 kHz
f = 300 to 3400 Hz
±0.3
dB
G
v(TX)(T)
voltage gain variation with
temperature referenced to
25
°C
Tamb = 25 to +75 °C
±0.3
dB
CMRR
common mode rejection ratio
65
dB
PSRR
power supply rejection ratio
36
dB
VLN(max)(rms)
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2%
1.2
1.4
V
Iline = 4 mA; THD = 10%
0.26
V
ViTX(max)(rms)
maximum transmit input
voltage (RMS value) for
2% THD on pin LN
Iline =15mA
0.35
V
Iline =90mA
0.75
V
Vno(LN)
noise output voltage at pin LN
pins TXI+ and TXI
short-circuited through
200
in series with 10 F;
psophometrically weighted
(P53 curve)
74
dBmp
Receive amplier (pins RXI and RXO; bit RXM)
Zi
input impedance between pins
RXI and GND
21
k
Gv(RX)
voltage gain from RXI to RXO
VRXI = 2 mV (RMS)
36.9
37.9
38.9
dB
G
v(RX)(f)
voltage gain variation with
frequency referenced to 1 kHz
f = 300 to 3400 Hz
±0.2
dB
G
v(RX)(T)
voltage gain variation with
temperature referenced to
25
°C
Tamb = 25 to +75 °C
±0.3
dB
PSRR
power supply rejection ratio
68
dB
THD
total harmonic distortion
VRXI = 2 mV (RMS)
0.03
%
VRXI = 12.5 mV (RMS)
2
%
VRXI = 19.5 mV (RMS);
Iline =90mA
2
%
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT