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參數(shù)資料
| 型號： | 935198040551 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 數(shù)字傳輸電路 |
| 英文描述： | CLOCK RECOVERY CIRCUIT, PQFP48 |
| 封裝： | PLASTIC, SOT-313, LQFP-48 |
| 文件頁數(shù)： | 24/38頁 |
| 文件大小： | 209K |
| 代理商： | 935198040551 |
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1999 May 27
30
Philips Semiconductors
Product specication
SDH/SONET data and clock recovery unit
STM1/4/16 OC3/12/48 GE
OQ2541HP; OQ2541U
Table 7
Physical characteristics of bare die
Thermal considerations
To improve heat transfer away from the product, a large area fill is recommended as a die pad. The die should be
mounted on this with a heat conductive glue. Bonding ALL supply and ground pads is essential for the electrical
performance, but also improves heat transfer to the die pad or other copper area fills. The more copper is leading away
from the die, the better the heat transport. On its turn, this copper should be able to loose its heat to the environment
through radiation, natural convection (non forced airflow over the printed-circuit board) or forced cooling.
NAME
DESCRIPTION
Glass passivation
0.8
m silicon nitride on top of 0.9 m PSG (PhosphoSilicate Glass)
Bonding pad dimension
minimum dimension of exposed metallization is 90
× 90 m (pad size = 100 × 100 m)
Metallization
1.8
m AlCu (1% Cu)
Thickness
380
m nominal
Size
2.360
× 2.360 mm (5.5696 mm2)
Backing
silicon; electrically connected to VEE potential through substrate contacts
Attache temperature
<440
°C; recommended die attache is glue
Attache time
<15 s
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