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參數(shù)資料
| 型號(hào)： | 934056902126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 934056902126 |
2001 Nov 19
3
Philips Semiconductors
Product specication
50 V low VCEsat PNP transistor
PBSS5350S
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current VCB = 50 V; IE =0
100
nA
VCB = 50 V; IE = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 2 V; IC = 500 mA
200
VCE = 2 V; IC = 1 A; note 1
200
VCE = 2 V; IC = 2 A; note 1
100
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA
100
mV
IC = 1 A; IB = 50 mA
180
mV
IC = 2 A; IB = 200 mA; note 1
300
mV
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
120
<150
m
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 200 mA; note 1
1.2
V
VBE
base-emitter turn-on voltage
VCE = 2 V; IC = 1 A; note 1
1.1
V
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz
100
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
40
pF
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| 934056903126 | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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| 0603PS-102KB | OBSOLETE Insert 'L' after 'K' for new part number. Part was always RoHS compliant; terminals never contained lead. |
| 0603PS-102KC | OBSOLETE Insert 'L' after 'K' for new part number. Part was always RoHS compliant; terminals never contained lead. |
| 0603PS-103KB | OBSOLETE Insert 'L' after 'K' for new part number. Part was always RoHS compliant; terminals never contained lead. |
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