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參數(shù)資料
| 型號： | 934056899112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 147K |
| 代理商： | 934056899112 |
2002 Mar 18
5
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
Fig.5
Intermodulation distortion as a function of
peak envelope load power, typical values.
VDS =27 V; f1 = 881.4 MHz; f2 =881.6 MHz.
-80
-60
-40
-20
0
20406080
100
PL (PEP) (W)
d
5
(dBc)
IDQ=600mA
500mA
400mA
450mA
Fig.6
Intermodulation distortion as a function of
peak envelope load power, typical values.
VDS =27 V; f1 = 881.4 MHz; f2 =881.6 MHz.
-80
-60
-40
-20
0
20406080
100
PL (PEP) (W)
d
7
(dBc)
IDQ=600mA
400mA
500mA
450mA
0
5
10
15
20
30
40
50
P
L avg (dBm)
G
P
(dB)
0
10
20
30
40
η
D
(%)
GP
η
D
Fig.7
Power gain and efficiency as functions of
the average load power, typical values.
VDS =27 V; IDQ = 500 mA; f = 881.5 MHz;
measured under CDMA conditions; test signal Standard IS-95
-80
-60
-40
-20
0
20
30
40
50
PL avg (dBm)
ACPR
(dB)
750 kHz
1.98 MHz
Fig.8
Intermodulation distortion as a function of
the average load power, typical values.
VDS =27 V; IDQ = 500 mA; f = 881.5 MHz;
measured under CDMA conditions; test signal Standard IS-95
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