參數(shù)資料
型號(hào)： 934056887127
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 10/14頁(yè)
文件大?。?/td> 290K
代理商： 934056887127
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
TrenchMOS logic level FET
Product data
Rev. 03 — 26 June 2002
5 of 14
9397 750 09667
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±15 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
VGS =5V; ID =25A; Figure 7 and 8
Tj =25 °C
-
11.5
13.5
m
Tj = 175 °C
-
20.7
24.3
m
VGS = 10 V; ID =25A;
Tj =25 °C
-
7.65
9
m
Dynamic characteristics
gfs
forward transconductance
VDS =25V; ID =50A
-
34
-
S
Qg(tot)
total gate charge
ID = 50 A; VDD =15V; VGS =5V; Figure 13
-13
-
nC
Qgs
gate-source charge
-
4.8
-
nC
Qgd
gate-drain (Miller) charge
-
4.2
5.6
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11
-
1074 -
pF
Coss
output capacitance
-
389
-
pF
Crss
reverse transfer capacitance
-
156
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 25 A; VGS =10V;
RG = 5.6 ; resistive load
-
2033ns
tr
rise time
-
92
130
ns
td(off)
turn-off delay time
-
30
48
ns
tf
fall time
-
4060ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12
-
0.95
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s; VDS =25V
-
40
-
ns
Qrr
recovered charge
-
32
-
nC
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