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參數(shù)資料
| 型號(hào)： | 934056885127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 262K |
| 代理商： | 934056885127 |
Philips Semiconductors
PHP52N06T
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 9 January 2002
2 of 12
9397 750 09121
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
60
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
-
52
A
Ptot
total power dissipation
Tmb =25 °C
-
118
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A
Tj =25 °C
1722m
Tj = 175 °C
-
44
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
60
V
VDGR
drain-gate voltage (DC)
RGS =20k
-60
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
-52
A
-37
A
IDM
peak drain current
-
208
A
Ptot
total power dissipation
-
120
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
52
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
208
A
Avalanche ruggedness
EDS(AL)
non-repetitive avalanche energy
unclamped inductive load; ID =48A;
VDS ≤ 55 V; VGS = 10 V; RGS =50 ; starting
Tmb =25 °C
-
115
mJ
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