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| 型號(hào)： | 934056875127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 36 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 294K |
| 代理商： | 934056875127 |
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 19 November 2001
6 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID x RDSON
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag45
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
2.4 V
Tj = 25 C
VGS = 2 V
2.8 V
2.6 V
10 V
2.2 V
5 V
03ag47
0
20
40
60
80
-0.2
0.6
1.4
2.2
3
VGS (V)
ID
(A)
VDS > ID x RDS(ON)
Tj = 25 C
175 C
03ag46
0
0.002
0.004
0.006
0.008
0.01
0
20406080
ID (A)
RDS(on)
(
)
VGS = 2.6V
Tj = 25 C
10 V
5 V
2.8 V
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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