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參數(shù)資料
| 型號： | 934056632215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 257K |
| 代理商： | 934056632215 |
Philips Semiconductors
SI2302DS
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 20 November 2001
7 of 12
9397 750 09107
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS =0V;f=1MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03ag05
0
0.4
0.8
1.2
-60
0
60
120
180
Tj (C)
VGS(th)
(V)
min
typ
03ah78
10-6
10-5
10-4
10-3
10-2
10-1
0
0.4
0.8
1.2
ID
(A)
VGS (V)
min
typ
03ae98
10
102
103
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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