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參數(shù)資料
| 型號： | 934043420118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 42K |
| 代理商： | 934043420118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR2045CT, PBYR2045CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
2
K/W
to mounting base
both diodes
-
1.5
K/W
R
th j-a
Thermal resistance junction
SOT78 package in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j = 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage per diode
I
F = 10 A; Tj = 125C
-
0.45
0.57
V
I
F = 20 A; Tj = 125C
-
0.64
0.72
V
I
F = 20 A
-
0.64
0.84
V
I
R
Reverse current per diode
V
R = VRWM
-
0.3
1.3
mA
V
R = VRWM; Tj = 100C
-
22
35
mA
C
d
Junction capacitance per
V
R = 5 V; f = 1 MHz, Tj = 25C to 125C
-
380
-
pF
diode
October 1998
2
Rev 1.400
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