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參數(shù)資料
| 型號(hào)： | 934041920118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 934041920118 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E series
ultrafast, rugged
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency
SYMBOL
PARAMETER
MAX.
UNIT
rugged dual rectifier diodes in a
plastic
envelope,
featuring
low
BYV42E-
100
150
200
forward
voltage
drop,
ultra-fast
V
RRM
Repetitive peak reverse
100
150
200
V
recovery times and soft recovery
voltage
characteristic. These devices can
V
F
Forward voltage
0.85
V
withstand reverse voltage transients
I
O(AV)
Output current (both
30
A
and have guaranteed reverse surge
diodes conducting)
and
ESD
capability.
They
are
t
rr
Reverse recovery time
28
ns
intended for use in switched mode
I
RRM
Repetitive peak reverse
0.2
A
power supplies and high frequency
current per diode
circuits
in
general
where
low
conduction and switching losses are
essential.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
RWM
Crest working reverse voltage
-
100
150
200
V
R
Continuous reverse voltage
1
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave
-
30
A
conducting)
2
δ = 0.5; T
mb ≤ 108 C
sinusoidal
-
27
A
a = 1.57; T
mb ≤ 111 C
I
O(RMS)
RMS forward current
-
43
A
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
30
A
per diode
T
mb ≤ 108 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
2t
I
2t for fusing
t = 10 ms
-
112
A
2s
I
RRM
Repetitive peak reverse current t
p = 2 s; δ = 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p = 100 s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1 T
mb ≤ 144C for thermal stability.
2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
1 2 3
tab
k
a1
a2
October 1994
1
Rev 1.100
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