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參數(shù)資料
| 型號： | 934031960135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.9 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, PMOS, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 934031960135 |
2000 Jul 03
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYG60 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG60D
200
V
BYG60G
400
V
BYG60J
600
V
BYG60K
800
V
BYG60M
1000
V
VR
continuous reverse voltage
BYG60D
200
V
BYG60G
400
V
BYG60J
600
V
BYG60K
800
V
BYG60M
1000
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 100 °C; see Fig.2
1.9
A
averaged over any 20 ms period;
Al2O3 printed-circuit board mounting
(see Fig.7); Tamb =60 °C; see Fig.3
0.9
A
averaged over any 20 ms period;
epoxy printed-circuit board mounting
(see Fig.7); Tamb =60 °C; see Fig.3
0.65
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
25
A
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